BC556 / BC557 / BC558 / BC559 / BC560 PNP Epitaxial Silicon Transistor January 2016 BC556 / BC557 / BC558 / BC559 / BC560 PNP Epitaxial Silicon Transistor Features Switching and Amplifier High-Voltage: BC556, V = -65 V CEO Low-Noise: BC559, BC560 TO-92 Complement to BC546, BC547, BC548, BC549, and BC550 1. Collector 2. Base 1 1 3. Emitter 2 3 2 3 Straight Lead Bent Lead Bulk Packing Tape & Reel Ammo Packing Ordering Information Part Number Marking Package Packing Method BC556ABU BC556A TO-92 3L Bulk BC556ATA BC556A TO-92 3L Ammo BC556BTA BC556B TO-92 3L Ammo BC556BTF BC556B TO-92 3L Tape and Reel BC556BTFR BC556B TO-92 3L Tape and Reel BC557ATA BC557A TO-92 3L Ammo BC557BTA BC557B TO-92 3L Ammo BC557BTF BC557B TO-92 3L Tape and Reel BC558BTA BC558B TO-92 3L Ammo BC559BTA BC559B TO-92 3L Ammo BC559CTA BC559C TO-92 3L Ammo BC560CTA BC560C TO-92 3L Ammo 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7 1 BC556 / BC557 / BC558 / BC559 / BC560 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. A Symbol Parameter Value Unit BC556 -80 V Collector-Base Voltage BC557 / BC560 -50 V CBO BC558 / BC559 -30 BC556 -65 V Collector-Emitter Voltage BC557 / BC560 -45 V CEO BC558 / BC559 -30 V Emitter-Base Voltage -5 V EBO I Collector Current (DC) -100 mA C I Peak Collector Current (Pulse) -200 mA CP I Peak Base Current (Pulse) -200 mA BP T Junction Temperature 150 C J T Storage Temperature Range -65 to +150 C STG (1) Thermal Characteristics Values are at T = 25C unless otherwise noted. A Symbol Parameter Max. Unit Total Power Dissipation 500 mW P D Derate Above 25C4.0mW/C R Thermal Resistance, Junction-to-Ambient 250 C/W JA Note: 1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7 2