CAV24M01 2 EEPROM Serial 1-Mb I C - Automotive Grade 1 Description 2 The CAV24M01 is a EEPROM Serial 1Mb I C, internally organized as 131,072 words of 8 bits each. www.onsemi.com It features a 256byte page write buffer and supports the Standard 2 (100 kHz), Fast (400 kHz) and FastPlus (1 MHz) I C protocol. Write operations can be inhibited by taking the WP pin High (this protects the entire memory). External address pins make it possible to address up to four SOIC8 W SUFFIX CAV24M01 devices on the same bus. CASE 751BD OnChip ECC (Error Correction Code) makes the device suitable for high reliability applications. Features Automotive AECQ100 Grade 1 (40C to +125C) Qualified TSSOP8 2 Y SUFFIX Supports Standard, Fast and FastPlus I C Protocol CASE 948AL 2.5 V to 5.5 V Supply Voltage Range 256Byte Page Write Buffer PIN CONFIGURATION Hardware Write Protection for Entire Memory 2 Schmitt Triggers and Noise Suppression Filters on I C Bus Inputs 1 NC V CC (SCL and SDA) A WP 1 Low Power CMOS Technology A SCL 2 1,000,000 Program/Erase Cycles V SDA SS 100 Year Data Retention SOIC (W), TSSOP (Y) 8pin SOIC and TSSOP Packages For the location of Pin 1, please consult the These Devices are PbFree, Halogen Free/BFR Free and are RoHS corresponding package drawing. Compliant V CC PIN FUNCTION Pin Name Function A , A Device Address 1 2 SCL SDA Serial Data CAV24M01 SDA SCL Serial Clock A , A 2 1 WP Write Protect WP V Power Supply CC V Ground SS V SS Figure 1. Functional Symbol ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: April, 2019 Rev. 3 CAV24M01/DCAV24M01 MARKING DIAGRAMS M01C AYMXXX 24M01A AYMXXX (TSSOP8) M01C = Specific Device Code (SOIC8) A = Assembly Location 24M01A = Specific Device Code Y = Production Year (Last Digit) A = Assembly Location M = Production Month (19, O, N, D) Y = Production Year (Last Digit) XXX = Last Three Digits of M = Production Month (19, O, N, D) = Assembly Lot Number XXX = Last Three Digits of = PbFree Microdot XXX = Assembly Lot Number Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Storage Temperature 65 to +150 C Voltage on any Pin with Respect to Ground (Note 1) 0.5 to +6.5 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units N (Notes 3, 4) Endurance 1,000,000 Program/Erase Cycles END T Data Retention 100 Years DR 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Test Condition: Page Mode, V = 5 V, 25C. CC 4. The device uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when a single byte has to be written, 4 bytes (including the ECC bits) are re-programmed. It is recommended to write by multiple of 4 bytes in order to benefit from the maximum number of write cycles. Table 3. D.C. OPERATING CHARACTERISTICS V = 2.5 V to 5.5 V, T = 40C to +125C, unless otherwise specied. CC A Symbol Parameter Test Conditions Min Max Units I Read Current Read, f = 400 kHz / 1 MHz 1 mA CCR SCL I Write Current V = 5.5 V 5.0 mA CCW CC I Standby Current All I/O Pins at GND or V T = 40C to +125C 5 A SB CC A I I/O Pin Leakage Pin at GND or V T = 40C to +125C 2 A L CC A V Input Low Voltage 0.5 0.3 V V IL1 CC V Input High Voltage 0.7 V V + 0.5 V IH1 CC CC V Output Low Voltage I = 3.0 mA 0.4 V OL1 OL www.onsemi.com 2