FCD360N65S3R0 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 10 A, 360 m Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductors brand new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate V R MAX I MAX DSS DS(ON) D charge performance. This advanced technology is tailored to minimize 650 V 360 m 10 V 10 A conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps D manage EMI issues and allows for easier design implementation. Features 700 V T = 150 C J G Typ. R = 310 m DS(on) Ultra Low Gate Charge (Typ. Q = 18 nC) g Low Effective Output Capacitance (Typ. C = 173 pF) oss(eff.) S 100% Avalanche Tested D These Devices are PbFree and are RoHS Compliant Applications G Computing / Display Power Supplies S Telecom / Server Power Supplies DPAK TO252 Industrial Power Supplies CASE 369AS Lighting / Charger / Adapter MARKING DIAGRAM Y&Z&3&K FCD360 N65S3R0 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot FCD360N65S3R0 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: August, 2019 Rev. 5 FCD360N65S3R0/DFCD360N65S3R0 ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise noted) C Symbol Parameter Value Unit V Drain to Source Voltage 650 V DSS V Gate to Source Voltage DC 30 V GSS AC (f > 1 Hz) 30 V I Drain Current: Continuous (T = 25C) 10 A D C Continuous (T = 100C) 6 C I Drain Current: Pulsed (Note 1) 25 A DM E Single Pulsed Avalanche Energy (Note 2) 40 mJ AS I Avalanche Current (Note 2) 2.1 A AS E Repetitive Avalanche Energy (Note 1) 0.83 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 P Power Dissipation (T = 25C) 83 W D C Derate Above 25C 0.67 W/C T , T Operating and Storage Temperature Range 55 to +150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulsewidth limited by maximum junction temperature. 2. I = 2.1 A, R = 25 , starting T = 25 C. AS G J 3. I 5 A, di/dt 200 A/ S, V 400 V, starting T = 25 C. SD DD J THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. 1.5 C/W JC R Thermal Resistance, Junction to Ambient, Max. Note 4) 52 JA 2 4. Device on 1 in pad 2 oz copper pad on 1.5 x 1.5 in. board of FR4 material. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FCD360N65S3R0 FCD360N65S3R0 TO252 Tape and Reel 330 mm 16 mm 2500 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2