X-On Electronics has gained recognition as a prominent supplier of FDMS8670AS MOSFETs across the USA, India, Europe, Australia, and various other global locations. FDMS8670AS MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FDMS8670AS ON Semiconductor

FDMS8670AS electronic component of ON Semiconductor
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Part No.FDMS8670AS
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: 30V, 42A, 3.0m ohm,NCH, POWER TRENCH SYNCFET
Datasheet: FDMS8670AS Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
8: USD 4.0687 ea
Line Total: USD 32.55 
Availability - 226
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 8  Multiples: 1
Pack Size: 1
Availability Price Quantity
226
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 8
Multiples : 1
8 : USD 4.0687
10 : USD 3.1369
100 : USD 1.7456
1000 : USD 0.6129
2000 : USD 0.609
10000 : USD 0.6037
24000 : USD 0.5854

   
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We are delighted to provide the FDMS8670AS from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDMS8670AS and other electronic components in the MOSFETs category and beyond.

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TM FDMS8670AS N-Channel PowerTrench SyncFET May 2009 FDMS8670AS tm TM N-Channel PowerTrench SyncFET  30V, 42A, 3.0m: Features General Description Max r = 3.0m : at V = 10V, I = 23A The FDMS8670AS has been designed to minimize losses in DS(on) GS D power conversion application. Advancements in both silicon and Max r = 4.7m : at V = 4.5V, I = 18A DS(on) GS D package technologies have been combined to offer the lowest Advanced Package and Silicon combination r while maintaining excellent switching performance. This DS(on) device has the added benefit of an efficient monolithic Schottky for low r and high efficiency DS(on) body diode. SyncFET Schottky Body Diode Applications MSL1 robust package design Synchronous Rectifier for DC/DC Converters RoHS Compliant Notebook Vcore/ GPU low side switch Networking Point of Load low side switch Telecom secondary side rectification Top Bottom Pin 1 S D 5 4 G S S G D 6 3 S D 7 2 S D D D D 8 1 S D Power 56 MOSFET Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous (Package limited) T = 25C 42 C -Continuous (Silicon limited) T = 25C 127 C I A D -Continuous T = 25C (Note 1a) 23 A -Pulsed 200 E Single Pulse Avalanche Energy 384 mJ AS Power Dissipation T = 25C 78 C P W D Power Dissipation T = 25C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.6 T JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 T JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS8670AS FDMS8670AS Power 56 13 12mm 3000units 1 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FDMS8670AS Rev.C2 TM FDMS8670AS N-Channel PowerTrench SyncFET Electrical Characteristics T = 25C unless otherwise noted J Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV Drain to Source Breakdown Voltage I = 1mA, V = 0V 30 V DSS D GS ' BV Breakdown Voltage Temperature DSS I = 10mA, referenced to 25C 28 mV/C D T Coefficient J I Zero Gate Voltage Drain Current V = 24V, V = 0V 500 P A DSS DS GS I Gate to Source Leakage Current V = 20V, V = 0V 100 nA GSS GS DS On Characteristics V Gate to Source Threshold Voltage V = V , I = 1mA 1.0 1.7 3.0 V GS(th) GS DS D V Gate to Source Threshold Voltage GS(th) I = 10mA, referenced to 25C -5 mV/C D T Temperature Coefficient J V = 10V, I = 23A 2.4 3.0 GS D r Static Drain to Source On Resistance V = 4.5V, I = 18A 3.5 4.7 m : DS(on) GS D V = 10V, I = 23A, T = 125C 3.5 4.7 GS D J g Forward Transconductance V = 10V, I = 23A 143 S FS DD D Dynamic Characteristics C Input Capacitance 2718 3615 pF iss V = 15V, V = 0V, DS GS C Output Capacitance 1537 2045 pF oss f = 1MHz C Reverse Transfer Capacitance 343 515 pF rss R Gate Resistance f = 1MHz 0.9 : g Switching Characteristics t Turn-On Delay Time 14 26 ns d(on) V = 15V, I = 23A, DD D t Rise Time 510 ns r V = 10V, R = 6 : GS GEN t Turn-Off Delay Time 32 52 ns d(off) t Fall Time 410 ns f Q Total Gate Charge V = 0V to 10V 39 55 nC g GS V = 15V, DD Q Total Gate Charge V = 0V to 4.5V 20 28 nC g GS I = 23A D Q Gate to Source Charge 7.2 nC gs Q Gate to Drain Miller Charge 4.0 nC gd Drain-Source Diode Characteristics V Source to Drain Diode Forward Voltage V = 0V, I =2A (Note 3) 0.4 0.7 V SD GS S t Reverse Recovery Time 39 63 ns rr I = 23A, di/dt = 300A/ P s F Q Reverse Recovery Charge 48 77 nC rr NOTES: 2 1. R is determined with the device mounted on a 1in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R is guaranteed by design while R is determined by T JA T JC T CA the user's board design. b. 125C/W when mounted on a a. 50C/W when mounted on minimum pad of 2 oz copper. 2 a 1 in pad of 2 oz copper. 2. Starting T = 25C, L = 3mH, I = 16A, V = 30V, V =10V. J AS DD GS 3. Pulse Test: Pulse Width < 300 P s, Duty cycle < 2.0%. 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 2 FDMS8670AS Rev.C2 '  ' ' 

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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