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TM FDMS8670S N-Channel PowerTrench SyncFET October 2014 FDMS8670S tm TM N-Channel PowerTrench SyncFET 30V, 42A, 3.5m: Features General Description The FDMS8670S has been designed to minimize losses in Max r = 3.5m : at V = 10V, I = 20A DS(on) GS D power conversion application. Advancements in both silicon and Max r = 5.0m : at V = 4.5V, I = 17A DS(on) GS D package technologies have been combined to offer the lowest r while maintaining excellent switching performance. This Advanced Package and Silicon combination for low r DS(on) DS(on) device has the added benefit of an efficient monolithic Schottky and high efficiency body diode. SyncFET Schottky Body Diode Application MSL1 robust package design RoHS Compliant Synchronous Rectifier for DC/DC Converters Notebook Vcore/ GPU low side switch Networking Point of Load low side switch Telecom secondary side rectification Top Bottom Pin 1 S D 5 4 G S S G D 6 3 S D 7 2 S D D D D 8 1 S D Power 56 MOSFET Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous (Package limited) T = 25C 42 C -Continuous (Silicon limited) T = 25C 116 C I -Continuous (Silicon limited) T = 100C 74 A D C -Continuous T = 25C 20 A -Pulsed 200 Power Dissipation T = 25C 78 C P Power Dissipation T = 25C (Note 1a) 2.5 W D A Power Dissipation T = 85C (Note 1a) 1.3 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.6 T JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 T JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS8670S FDMS8670S Power 56 13 12mm 3000 units 1 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FDMS8670S Rev.C6