Rectifier STEALTH II 8 A, 600 V FFD08S60S-F085 The FFD08S60S F085 is stealth 2 rectifier with soft recovery characteristics (t < 30ns). They has half the recovery time of rr hyperfast rectifier and are silicon nitride passivated ionimplanted www.onsemi.com epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Cathode Anode Features High Speed Switching (Max. t < 30 ns I = 8 A) rr F High Reverse Voltage and High Reliability Avalanche Energy Rated Cathode Cathode AECQ101 Qualified and PPAP Capable (Flange) PbFree and RoHS Compliant Anode DPAK3 Applications CASE 369AS General Purpose Switching Mode Power Supply MARKING DIAGRAM Boost Diode in Continuous Mode Power Factor Corrections Power Switching Circuits ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter Ratings Unit Y&Z&3&K V Peak Repetitive Reverse Voltage 600 V RRM F08S60S V Working Peak Reverse Voltage 600 V RWM V DC Blocking Voltage 600 V R I Average Rectified Forward Current 8 A F(AV) T = 115C C I Nonrepetitive Peak Surge Current 80 A FSM 60 Hz Single HalfSine Wave Y = ON Semiconductor Logo &Z = Assembly Plant Code T , T Operating Junction and Storage 65 to + 150 C J STG &3 = Numeric Date Code Temperature &K = Lot Code Stresses exceeding those listed in the Maximum Ratings table may damage the F08S60S = Specific Device Code device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION THERMAL CHARACTERISTICS (T = 25C unless otherwise noted) C Device Package Shipping Symbol Parameter Ratings Unit FFD08S60F085 DPAK3 2500 / R Maximum Thermal Resistance, 3.0 C/W JC (PbFree) Tape & Reel Junction to Case For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2010 1 Publication Order Number: January, 2021 Rev. 4 FFD08S60SF085/DFFD08S60SF085 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Conditions Min Typ Max Unit V I = 8 A, I = 8 A T = 25C 2.1 2.6 V FM F F C (Note 1) T = 125C 1.6 C I V = 600 V, V = 600 V T = 25C 100 A RM R R C (Note 1) T = 125C 500 C t T = 25C 25 ns I = 1 A, di/dt = 100 A/ s, V = 30 V rr F R C t I = 8 A, di/dt = 200 A/ s, V = 390 V T = 25C 19 30 ns rr F R C I 2.2 A rr S factor 0.6 Q 21 nC rr t I = 8 A, di/dt = 200 A/ s, V = 390 V T = 125C 58 ns rr F R C I 4.3 A rr S factor 1.3 Q 125 nC rr W Avalanche Energy (L = 40 mH) 20 mJ AVL Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse: Test Pulse width = 300 s, Duty Cycle = 2%. TEST CIRCUIT AND WAVEFORMS V Amplitude and GE R Control dI /dt G F L DUT t and t Control I 1 2 F t rr CURRENT dI F R G t t a b + SENSE dt V 0 V DD GE IGBT t 1 0.25 I RM t 2 I RM Figure 1. t Test Circuit Figure 2. t Waveform and Definitions rr rr I = 1 A MAX L = 40 mH R < 0.1 V = 50 V DD 2 E = 1/2LI V / (V V ) AVL R(AVL) R(AVL) DD Q = IGBT (BV > DUT V ) 1 CES R(AVL) V AVL LR + CURRENT V DD I I Q1 L L SENSE IV V DD DUT t t t t 0 1 2 Figure 3. Avalanche Energy Test Circuit Figure 4. Avalanche Current and Voltage Waveforms www.onsemi.com 2