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It is silicon nitride passivated ion-implanted 600 V Reverse Voltage and High Reliability epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and RoHS Compliant other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in Applications many power switching circuits reducing power loss in the General Purpose switching transistors. SMPS Boost Diode in Continuous Mode Power Factor Corrections Power Switching Circuits Pin Assignments 1 2 TO-220F-2L 1. Cathode 2. Anode 1. Cathode 2. Anode Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter Value Unit V Peak Repetitive Reverse Voltage 600 V RRM V Working Peak Reverse Voltage 600 V RWM V DC Blocking Voltage 600 V R I Average Rectified Forward Current T = 95 C8 A F(AV) C I Non-repetitive Peak Surge Current 80 A FSM 60Hz Single Half-Sine Wave T T Operating Junction and Storage Temperature - 65 to +175 C J, STG Thermal Characteristics T = 25C unless otherwise noted C Symbol Parameter Max Unit R Maximum Thermal Resistance, Junction to Case 3.4 C/W JC Package Marking and Ordering Information Part Number Top Mark Package Reel Size Tape Width Quantity FFPF08S60S F08S60S TO-220F-2L - - 50 2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FFPF08S60S Rev. C2