FFPF10F150S 10 A, 1500 V, Damper Diode Features High Speed Recovery t = 170 ns ( I = 1 A) RR F Max Forward Voltage, V = 1.6 V ( T = 25C) F C www.onsemi.com 1500 V Reverse Voltage and High Reliability Low Forward Voltage This Device is PbFree and is RoHS Compliant Applications 1 2 Suitable for Damper Diode in Horizontal Deflection Circuits 1. Cathode 2. Anode ABSOLUTE MAXIMUM RATINGS T = 25C unless otherwise noted C Symbol Parameter Rating Unit VRRM Peak Repetitive Reverse Voltage 1500 V VRWM Working Peak Reverse Voltage 1500 V IF(AV) Average Rectified Forward Current 10 A T = 125C C 12 IFSM Nonrepetitive Peak Surge Current 100 A 60Hz Single HalfSine Wave TO220, 2Lead TJ, TSTG Operating Junction and Storage 65 to C CASE 221AS Temperature +175 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. MARKING DIAGRAM Y&Z&3&K F10F150S Y = ON Semiconductor Logo &Z&3 = Data Code (Year & Week) &K = Lot F10F150S = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2000 1 Publication Order Number: March, 2019 Rev. 3 FFPF10F150S/DFFPF10F150S THERMAL CHARACTERISTICS T = 25C unless otherwise noted C Symbol Parameter Max. Unit C/W RJC Maximum Thermal Resistance, Junction to Case 3.0 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FFPF10F150STU F10F150S TO220F2L Tube N/A N/A 30 ELECTRICAL CHARACTERISTICS T = 25C unless otherwise noted C Parameter Conditions Min. Typ. Max. Unit V V Maximum Instantaneous Forward Voltage F (Note 1) T = 25C 1.6 I = 10 A C F T = 125C 1.4 I = 10 A C F I A R Maximum Instantaneous Reverse Current (Note 1) T = 25C 10 C rated V R T = 125C 80 C t Maximum Reverse Recovery Time (I = 1 A, di /dt = 50 A/ s, V = 30 V) 170 ns RR F F R t Maximum Forward Recovery Time (I = 6.5 A, di /dt = 50 A/ s) 250 ns FR F F V Maximum Forward Recovery Voltage 14 V FRM Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse: Test Pulse Width = 300 s, Duty Cycle = 2% Test Circuit and Waveforms Figure 1. Diode Reverse Recovery Test Circuit & Waveform Figure 2. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 2