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It has the half recovery time of ultrafast diodes 600 V Reverse Voltage and High Reliability and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as Avalanche Energy Rated freewheeling/ clamping diodes and diodes in a variety of switching power supplies and other power switching RoHS Compliant applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching Applications circuits reducing power loss in the switching transistors. General Purpose Switching Mode Power Supply Free-Wheeling Diode for Motor Application Power Switching Circuits Pin Assignments 1 2 TO-220F-2L 1. Cathode 2. Anode 1. Cathode 2. Anode Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter Unit Ratings V Peak Repetitive Reverse Voltage 600 V RRM V Working Peak Reverse Voltage 600 V RWM V DC Blocking Voltage 600 V R I Average Rectified Forward Current T = 105 C8 A F(AV) C I Non-repetitive Peak Surge Current 60 A FSM 60Hz Single Half-Sine Wave T T Operating Junction and Storage Temperature - 65 to +175 C J, STG Thermal Characteristics T = 25C unless otherwise noted C Symbol Parameter Max. Unit R Maximum Thermal Resistance, Junction to Case 3.4 C/W JC Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FFPF08H60STU FFPF08H60S TO-220F-2L Tube N/A N/A 60 1 www.fairchildsemi.com 2007 Fairchild Semiconductor Corporation FFPF08H60S Rev. C2