FFPF08S60ST 8 A, 600 V, STEALTH II Diode Description The FFPF08S60S is STEALTH II diode with soft recovery www.onsemi.com characteristics. It is silicon nitride passivated ionimplanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power 1 2 loss in the switching transistors. 1. Cathode 2. Anode Features Stealth Recovery t = 30 ns ( I = 8 A) rr F Max Forward Voltage, V = 3.4 V ( T = 25C) F C 600 V Reverse Voltage and High Reliability This Device is PbFree and are RoHS Compliant 1 2 Applications General Purpose TO220F2L CASE 221AS SMPS Boost Diode in Continuous Mode Power Factor Corrections Power Switching Circuits MARKING DIAGRAM ABSOLUTE MAXIMUM RATINGS T = 25C unless otherwise noted C Symbol Parameter Value Unit V Peak Repetitive Reverse Voltage 600 V RRM V Working Peak Reverse Voltage 600 V RWM V DC Blocking Voltage 600 V R Y&Z&3&K F08S60ST I Average Rectified Forward Current 8 A F(AV) T = 95 C C I 80 A FSM Nonrepetitive Peak Surge Current 60Hz Single HalfSine Wave Y = ON Semiconductor Logo C T , T Operating Junction and Storage 65 to +175 J STG &Z&3 = Data Code (Year & Week) Temperature &K = Lot F08S60ST = Specific Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Device Package Shipping FFPF08S60STTU TO220F2L 50 / Tube Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: March, 2019 Rev. 3 FFPF08S60ST/DFFPF08S60ST THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Maximum Thermal Resistance, JunctiontoCase 3.4 C/W JC ELECTRICAL CHARACTERISTICS Parameter Conditions Min. Typ. Max Unit V F1 2.1 2.6 I = 8 A I = 8 A T = 25 C T = 125 C C C F F V V 1.6 I 100 A R1 T = 25 C T = 125 C V = 600 V V = 600 V C C R R A 500 t I =1 A, di /dt = 100 A/ s, V = 30 V T = 25 C 25 ns F F R C rr I =8 A, di /dt = 200 A/ s, V = 390 V T = 25 C 19 30 F F R C T ns rr 2.2 I rr A 0.6 S factor 21 Q nC rr I =8 A, di /dt = 200 A/ s, V = 390 V T = 125 C 58 F F R C t ns rr 4.3 I A rr 1.3 S factor 125 nC W Avalanche Energy (L = 40 mH) 20 mJ AVL Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse: Test Pulse width = 300 s, Duty Cycle = 2% Test Circuit and Waveforms Figure 1. Diode Reverse Recovery Test Circuit & Waveform Figure 2. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 2