X-On Electronics has gained recognition as a prominent supplier of MBRD835LT4G Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. MBRD835LT4G Schottky Diodes & Rectifiers are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

MBRD835LT4G ON Semiconductor

MBRD835LT4G electronic component of ON Semiconductor
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Part No.MBRD835LT4G
Manufacturer: ON Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 8A 35V Low Vf
Datasheet: MBRD835LT4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.3475 ea
Line Total: USD 868.75 
Availability - 4850
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
4850
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.3475
5000 : USD 0.3415
7500 : USD 0.3292
10000 : USD 0.3242
15000 : USD 0.3195
25000 : USD 0.3146

2176
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6585
10 : USD 0.5303
30 : USD 0.4671
100 : USD 0.4039
500 : USD 0.3657
1000 : USD 0.3465

1092
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 1.106
29 : USD 0.602
80 : USD 0.574
500 : USD 0.5516

1024
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 21
Multiples : 1
21 : USD 0.8822
25 : USD 0.8733
100 : USD 0.6158
250 : USD 0.6096
500 : USD 0.4943
1000 : USD 0.3741

4850
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.4698
5000 : USD 0.4618
7500 : USD 0.4451
10000 : USD 0.4384
15000 : USD 0.432

48500
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 2500
Multiples : 2500
2500 : USD 0.4359
5000 : USD 0.4333

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Operating Temperature Range
Termination Style
Type
Width
Brand
Cnhts
Hts Code
Mxhts
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Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MBRD835LT4G from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MBRD835LT4G and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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Switch-mode Power Rectifier DPAK Surface Mount Package MBRD835L, SBRD8835L This switchmode power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output www.onsemi.com rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. SCHOTTKY BARRIER Features RECTIFIER Low Forward Voltage 8.0 AMPERES, 35 VOLTS 150C Operating Junction Temperature Epoxy Meets UL 94 V0 0.125 in Compact Size DPAK Lead Formed for Surface Mount CASE 369C SBRD8 Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirements AECQ101 4 Qualified and PPAP Capable 3 These Devices are PbFree and are RoHS Compliant MARKING DIAGRAM Mechanical Characteristics AYWW Case: Epoxy, Molded B Weight: 0.4 Gram (Approximately) 835LG Finish: All External Surfaces Corrosion Resistant and Terminal B835LG = Specific Device Number Leads are Readily Solderable A = Assembly Location* Lead and Mounting Surface Temperature for Soldering Purposes: Y = Year WW = Work Week 260C Max. for 10 Seconds G = PbFree Device Shipped 75 Units Per Plastic Tube * The Assembly Location Code (A) is front side ESD Rating: optional. In cases where the Assembly Location is Machine Model = C (> 400 V) stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. Human Body Model = 3B (> 8000 V) ORDERING INFORMATION Device Package Shipping MBRD835LG DPAK 75 Units / Rail (PbFree) SBRD8835LG DPAK 75 Units / Rail (PbFree) SBRD8835LGVF01 DPAK 75 Units / Rail (PbFree) MBRD835LT4G DPAK 2,500 / (PbFree) Tape & Reel SBRD835LT4GVF01 DPAK 2,500 / (PbFree) Tape & Reel SBRD8835LT4G DPAK 2,500 / (PbFree) Tape & Reel SBRD8835LT4GVF01 DPAK 2,500 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure BRD8011/D Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: August, 2020 Rev. 13 MBRD835L/DMBRD835L, SBRD8835L MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 35 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (T = 88C) 8.0 C Peak Repetitive Forward Current I A FRM (Square Wave, Duty = 0.5, T = 80C) 16 C NonRepetitive Peak Surge Current I A FSM (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) 75 Repetitive Avalanche Current I A AR (Current Decaying Linearly to Zero in 1 s, Frequency Limited by T ) 2.0 Jmax Storage / Operating Case Temperature T 65 to +150 C stg Operating Junction Temperature (Note 1) T 65 to +150 C J Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance JunctiontoCase R 2.8 C/W JC Thermal Resistance JunctiontoAmbient (Note 2) R 80 C/W JA 2. Rating applies when surface mounted on the minimum pad size recommended. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 3) V V F (i = 8 Amps, T = +25C) 0.51 F C (i = 8 Amps, T = +125C) 0.41 F C Maximum Instantaneous Reverse Current (Note 3) I mA R (Rated dc Voltage, T = +25C) 1.4 C (Rated dc Voltage, T = +100C) 35 C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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