MMDF1N05E, MVDF1N05E Power MOSFET 2 A, 50 V, NChannel SO8, Dual These miniature surface mount MOSFETs feature ultra low R DS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a low reverse recovery time. These devices MMDF1N05E, MVDF1N05E ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V 50 Vdc (BR)DSS (V = 0, I = 250 A) GS D Zero Gate Voltage Drain Current I 2 Adc DSS (V = 50 V, V = 0) DS GS GateBody Leakage Current I 100 nAdc GSS (V = 20 Vdc, V = 0) GS DS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage (V = V , I = 250 Adc) V 1.0 3.0 Vdc DS GS D GS(th) DraintoSource OnResistance (V = 10 Vdc, I = 1.5 Adc) R 0.30 GS D DS(on) (V = 4.5 Vdc, I = 0.6 Adc) R 0.50 GS D DS(on) Forward Transconductance (V = 15 V, I = 1.5 A) g 1.5 mhos DS D FS DYNAMIC CHARACTERISTICS Input Capacitance C 330 pF iss (V = 25 V, V = 0, DS GS Output Capacitance C 160 oss f = 1.0 MHz) Reverse Transfer Capacitance C 50 rss SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time t 20 ns d(on) Rise Time t 30 r (V = 10 V, I = 1.5 A, R = 10 , DD D L V = 10 V, R = 50 ) G G Turn Off Delay Time t 40 d(off) Fall Time t 25 f Total Gate Charge Q 12.5 nC g (V = 10 V, I = 1.5 A, DS D GateSource Charge Q 1.9 gs V = 10 V) GS GateDrain Charge Q 3.0 gd SOURCEDRAIN DIODE CHARACTERISTICS (T = 25C) C Forward Voltage (Note 2) V 1.6 V SD (I = 1.5 A, V = 0 V) S GS (dI /dt = 100 A/ s) S Reverse Recovery Time t 45 ns rr 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 3. Switching characteristics are independent of operating junction temperature.