X-On Electronics has gained recognition as a prominent supplier of MMDF1N05ER2G MOSFETs across the USA, India, Europe, Australia, and various other global locations. MMDF1N05ER2G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

MMDF1N05ER2G ON Semiconductor

MMDF1N05ER2G electronic component of ON Semiconductor
MMDF1N05ER2G ON Semiconductor
MMDF1N05ER2G MOSFETs
MMDF1N05ER2G  Semiconductors

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See Product Specifications
Part No. MMDF1N05ER2G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET NFET SO8D 50V 200mA 300mOhm
Datasheet: MMDF1N05ER2G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.6514 ea
Line Total: USD 1628.5 
Availability - 0
MOQ: 2500  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 11 Mar to Mon. 17 Mar
MOQ : 2500
Multiples : 1
2500 : USD 0.6514

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the MMDF1N05ER2G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMDF1N05ER2G and other electronic components in the MOSFETs category and beyond.

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MMDF1N05E, MVDF1N05E Power MOSFET 2 A, 50 V, NChannel SO8, Dual These miniature surface mount MOSFETs feature ultra low R DS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a low reverse recovery time. These devices MMDF1N05E, MVDF1N05E ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V 50 Vdc (BR)DSS (V = 0, I = 250 A) GS D Zero Gate Voltage Drain Current I 2 Adc DSS (V = 50 V, V = 0) DS GS GateBody Leakage Current I 100 nAdc GSS (V = 20 Vdc, V = 0) GS DS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage (V = V , I = 250 Adc) V 1.0 3.0 Vdc DS GS D GS(th) DraintoSource OnResistance (V = 10 Vdc, I = 1.5 Adc) R 0.30 GS D DS(on) (V = 4.5 Vdc, I = 0.6 Adc) R 0.50 GS D DS(on) Forward Transconductance (V = 15 V, I = 1.5 A) g 1.5 mhos DS D FS DYNAMIC CHARACTERISTICS Input Capacitance C 330 pF iss (V = 25 V, V = 0, DS GS Output Capacitance C 160 oss f = 1.0 MHz) Reverse Transfer Capacitance C 50 rss SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time t 20 ns d(on) Rise Time t 30 r (V = 10 V, I = 1.5 A, R = 10 , DD D L V = 10 V, R = 50 ) G G Turn Off Delay Time t 40 d(off) Fall Time t 25 f Total Gate Charge Q 12.5 nC g (V = 10 V, I = 1.5 A, DS D GateSource Charge Q 1.9 gs V = 10 V) GS GateDrain Charge Q 3.0 gd SOURCEDRAIN DIODE CHARACTERISTICS (T = 25C) C Forward Voltage (Note 2) V 1.6 V SD (I = 1.5 A, V = 0 V) S GS (dI /dt = 100 A/ s) S Reverse Recovery Time t 45 ns rr 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 3. Switching characteristics are independent of operating junction temperature.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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