MBR40L45CTG, NRVBB40L45CTT4G Switch-mode Power Rectifier 45 V, 40 A www.onsemi.com Features and Benefits SCHOTTKY BARRIER Low Forward Voltage RECTIFIERS Low Power Loss/High Efficiency High Surge Capacity 40 AMPERES, 45 VOLTS 175C Operating Junction Temperature 1 40 A Total (20 A Per Diode Leg) 2, 4 GuardRing for Stress Protection 3 NRVBB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 MARKING Qualified and PPAP Capable DIAGRAMS These Devices are PbFree and are RoHS Compliant 4 Applications TO220 Power Supply Output Rectification CASE 221A Power Management AYWW STYLE 6 B40L45G Instrumentation A K A 1 2 Mechanical Characteristics: 3 Case: Epoxy, Molded Epoxy Meets UL 94 V0 0.125 in 4 AY WW 2 D PAK 3 Weight (Approximately): 1.9 Grams (TO220) CASE 418B B40L45G Finish: All External Surfaces Corrosion Resistant and Terminal STYLE 3 AKA Leads are Readily Solderable 1 Lead Temperature for Soldering Purposes: 3 260C Max. for 10 Seconds Shipped 50 Units Per Plastic Tube for TO220 B40L45 = Device Code A = Assembly Location Y = Year WW = Work Week G = PbFree Device AKA = Polarity Designator ORDERING INFORMATION Device Package Shipping MBR40L45CTG TO220 50 Units/Rail (PbFree) 2 NRVBB40L45CTT4G D PAK 3 800 /Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 3 MBR40L45CT/DMBR40L45CTG, NRVBB40L45CTT4G MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 45 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I 20 A F(AV) (Rated V ) T = 145C R C Peak Repetitive Forward Current I 40 A FRM (Rated V , Square Wave, 20 kHz) R Non-repetitive Peak Surge Current I 200 A FSM (Surge applied at rated load conditions half-wave, single phase, 60 Hz) Operating Junction Temperature (Note 1) T 65 to +175 C J Storage Temperature T 65 to +175 C stg Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R ESD Ratings: Machine Model = C > 400 V Human Body Model = 3B > 8000 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Thermal Resistance C/W JunctiontoCase R 1.9 JC JunctiontoAmbient R 72.9 JA ELECTRICAL CHARACTERISTICS (Per Diode Leg) Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2) v V F (I = 20 A, T = 25C) 0.50 F C (I = 20 A, T = 125C) 0.48 F C (I = 40 A, T = 25C) 0.63 F C (I = 40 A, T = 125C) 0.68 F C Maximum Instantaneous Reverse Current (Note 2) i mA R (Rated DC Voltage, T = 25C) 1.2 C (Rated DC Voltage, T = 125C) 275 C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. www.onsemi.com 2