X-On Electronics has gained recognition as a prominent supplier of NSP4201MR6T1G ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. NSP4201MR6T1G ESD Suppressors / TVS Diodes are a product manufactured by ON Semiconductor. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

NSP4201MR6T1G ON Semiconductor

NSP4201MR6T1G electronic component of ON Semiconductor
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Part No.NSP4201MR6T1G
Manufacturer: ON Semiconductor
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes MI TSOP6 LO CAP DIODE ARR
Datasheet: NSP4201MR6T1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1988 ea
Line Total: USD 0.2 
Availability - 8
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1988

280
Ship by Fri. 22 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4627
10 : USD 0.3706
30 : USD 0.3302
100 : USD 0.2803
500 : USD 0.2592
1000 : USD 0.2457

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Qualification
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Numofpackaging
Pd - Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NSP4201MR6T1G from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NSP4201MR6T1G and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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NSP4201MR6 ESD and Surge Protection Device Low Clamping Voltage Surge Protection Diode Array www.onsemi.com The NSP4201MR6 surge protector is designed to protect high speed data lines from ESD, EFT, and lightning surges. 6 Features 1 Protection for the Following IEC Standards: TSOP6 IEC 6100042 (ESD) 30 kV (Contact) CASE 318G IEC 6100045 (Lightning) 25 A (8/20 s) Low Clamping Voltage MARKING DIAGRAM Low Leakage UL Flammability Rating of 94 V0 42 M SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable 42 = Specific Device Code These Devices are PbFree, Halogen Free/BFR Free and are RoHS M = Date Code Compliant = PbFree Package (Note: Microdot may be in either location) Typical Applications *Date Code orientation may vary High Speed Communication Line Protection depending upon manufacturing location. USB 1.1 and 2.0 Power and Data Line Protection Digital Video Interface (DVI) PIN CONFIGURATION AND SCHEMATIC Monitors and Flat Panel Displays I/O 1 6 I/O MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit V 2 5 V N P Peak Power Dissipation P 500 W pk 8/20 s T = 25C (Note 1) A I/O 3 4 I/O Operating Junction Temperature Range T 40 to +125 C J Storage Temperature Range T 55 to +150 C stg Lead Solder Temperature T L Maximum (10 Seconds) 260 C ORDERING INFORMATION IEC 6100042 Air (ESD) ESD 30 kV Device Package Shipping IEC 6100042 Contact (ESD) 30 NSP4201MR6T1G TSOP6 3000 / Tape & IEC 6100044 (5/50 ns) EFT 40 A (PbFree) Reel Stresses exceeding those listed in the Maximum Ratings table may damage the SZNSP4201MR6T1G TSOP6 3000 / Tape & device. If any of these limits are exceeded, device functionality should not be (PbFree) Reel assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 1 (Pin 5 to Pin 2) For information on tape and reel specifications, including part orientation and tape sizes, please See Application Note AND8308/D for further description of refer to our Tape and Reel Packaging Specification survivability specs. Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: June, 2017 Rev. 1 NSP4201MR6/DNSP4201MR6 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM V V V C BR RWM V I V I Maximum Reverse Leakage Current V R F R RWM I T V Breakdown Voltage I BR T I Test Current T I Forward Current F I PP V Forward Voltage I F F P Peak Power Dissipation pk UniDirectional Surge Protection C Capacitance V = 0 and f = 1.0 MHz R *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T =25C unless otherwise specified) J Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V (Note 2) 5.0 V RWM Breakdown Voltage V I =1 mA, (Note 3) 6.0 V BR T Reverse Leakage Current I V = 5 V 1.0 A R RWM Clamping Voltage V V I = 1 A, Any I/O to GND 8.5 C PP (t = 8/20 s per Figure 1) p I = 5 A, Any I/O to GND 9.0 PP I = 8 A, Any I/O to GND 10 PP I = 25 A, Any I/O to GND 12 PP Junction Capacitance C V = 0 V, f=1 MHz between I/O Pins and GND 3.0 5.0 pF J R Junction Capacitance C V = 0 V, f=1 MHz between I/O Pins 1.5 3.0 pF J R 2. Surge protection devices are normally selected according to the working peak reverse voltage (V ), which should be equal or greater RWM than the DC or continuous peak operating voltage level. 3. V is measured at pulse test current I . BR T 20 100 t PEAK VALUE I 8 s r RSM 90 18 PULSE WIDTH (t ) IS DEFINED P 16 80 AS THAT POINT WHERE THE 14 70 PEAK CURRENT DECAY = 8 s 60 12 HALF VALUE I /2 20 s RSM I/OGND 50 10 40 8 6 30 t P 4 20 10 2 0 0 020 40 60 80 05 10 15 20 25 30 PEAK PULSE CURRENT (A) t, TIME ( s) Figure 1. IEC6100045 8/20 s Pulse Waveform Figure 2. Clamping Voltage vs. Peak Pulse Current (t = 8/20 s per Figure 1) p www.onsemi.com 2 % OF PEAK PULSE CURRENT CLAMPING VOLTAGE (V)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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FAIRCHILD (ON SEMICONDUCTOR)
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