NSPM1041B ESD Protection Diode Features Protection for the following IEC Standards: IEC6100042 Level 4: 30 kV Contact Discharge IEC6100045 (Lightning) 125 A (8/20 s) www.onsemi.com These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Pin 1 Pin 2 Rating Symbol Value Unit IEC 6100042 (ESD) Contact 30 kV Air 30 MARKING DIAGRAM Operating Junction and Storage T , T 65 to +150 C J stg Temperature Range MCM Maximum Peak Pulse Current I 125 A UDFN2 PP 8/20 s T = 25C, Pin 2 to Pin 1 CASE 517DF A Stresses exceeding those listed in the Maximum Ratings table may damage the MC = Specific Device Code device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. M = Date Code ORDERING INFORMATION Device Package Shipping NSPM1041BMUTBG UDFN2 3000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2017 Rev. 5 NSPM1041/DNSPM1041B ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter I Maximum Reverse Peak Pulse Current R PP DYN I T V Clamping Voltage I I V V V C PP R C BR RWM V I V V V V Working Peak Reverse Voltage R RWM BR C RWM I T I Maximum Reverse Leakage Current V R R RWM DYN V Breakdown Voltage I BR T I PP I Test Current T BiDirectional *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V Pin 1 to Pin 2 3.3 V RWM Reverse Working Voltage V Pin 2 to Pin 1 4.8 V RWM Breakdown Voltage V I = 1 mA, Pin 1 to Pin 2 4.5 6.0 V BR T Breakdown Voltage V I = 1 mA, Pin 2 to Pin 1 4.85 6.0 V BR T Reverse Leakage Current I V = 3.3 V, Pin 1 to Pin 2 1.0 A R RWM Reverse Leakage Current I V = 4.8 V, Pin 2 to Pin 1 1.0 A R RWM Clamping Voltage (Note 1) V I = 1 A, t = 8 x 20 s 5.6 V C PP p Clamping Voltage (Note 1) V 7.2 V I = 35 A, t = 8 x 20 s C PP p Clamping Voltage (Note 1) V I = 80 A, t = 8 x 20 s 8.0 V C PP p Clamping Voltage (Note 1) V I = 125 A, t = 8 x 20 s 10.8 V C PP p Clamping Voltage TLP V V I = 8 A IEC 6100042 Level 2 equivalent 5.6 C PP (Note 2) (4 kV Contact, 8 kV Air) I = 16 A 5.8 PP IEC 6100042 Level 4 equivalent (8 kV Contact, 16 kV Air) Dynamic Resistance R TLP Pulse, Pin 1 to Pin 2 0.022 DYN Dynamic Resistance R TLP Pulse, Pin 2 to Pin 1 0.018 DYN Junction Capacitance C V = 0 V, f = 1 MHz 480 pF J R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Nonrepetitive current pulse at T = 25C, per IEC6100045 waveform. A 2. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z = 50 , t = 100 ns, t = 4 ns, averaging window t = 30 ns to t = 60 ns. 0 p r 1 2 www.onsemi.com 2