DATA SHEET www.onsemi.com ESD and Surge Protection Device Pin 1 Pin 2 NSPM2052 MARKING DIAGRAM Features Protection for the following IEC Standards: XXM UDFN3 IEC6100042 Level 4: 30 kV Contact Discharge CASE 517DY IEC6100045 (Lightning) 120 A (8/20 s) These Devices are PbFree, Halogen Free/BFR Free and are RoHS XX = Specific Device Code Compliant M = Date Code MAXIMUM RATINGS Rating Symbol Value Unit ORDERING INFORMATION IEC 6100042 (ESD) Contact 30 kV Device Package Shipping Air 30 NSPM2052MUT5G UDFN3 8000 / Tape & Operating Junction and Storage T , T 65 to +150 C J stg (PbFree) Reel Temperature Range For information on tape and reel specifications, Maximum Peak Pulse Current I 120 A PP including part orientation and tape sizes, please 8/20 s T = 25C A refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: September, 2021 Rev. 3 NSPM2052/DNSPM2052 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V V V V Working Peak Reverse Voltage C BR RWM RWM V I V R F I Maximum Reverse Leakage Current V I R RWM T V Breakdown Voltage I BR T I Test Current T *See Application Note AND8308/D for detailed explanations of I PP datasheet parameters. UniDirectional TVS ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V 5.0 V RWM Breakdown Voltage (Note 1) V I = 1 mA 5.1 7.0 V BR T Reverse Leakage Current I V = 5.0 V 0.1 A R RWM Clamping Voltage (Note 2) V I = 80 A, t = 8 x 20 s 7.0 8.0 V C PP p Clamping Voltage (Note 2) V I = 100 A, t = 8 x 20 s 7.5 8.5 V C PP p Clamping Voltage (Note 2) V I = 120 A, t = 8 x 20 s 8.0 9.0 V C PP p Junction Capacitance C V = 0 V, f = 1 MHz 400 pF J R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1. 2. Nonrepetitive current pulse at T = 25C, per IEC6100045 waveform, See Figure 10. A 50 30 40 20 30 10 20 0 10 10 0 20 10 30 20 40 20 0 20 40 60 80 100 120 140 20 0 20 40 60 80 100 120 140 TIME (ns) TIME (ns) Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC6100042 Negative 8 kV Contact per IEC6100042 www.onsemi.com 2 VOLTAGE (V) VOLTAGE (V)