NSPM3042 4.8 V Bidirectional ESD and Surge Protection Device The NSPM3042 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, high peak pulse current handling capability and fast response time provide best www.onsemi.com in class protection on designs that are exposed to ESD. Because of its small size, it is suited for use in cellular phones, tablets, MP3 players, digital cameras and many other portable applications where board space comes at a premium. 12 Features Low Clamping Voltage Low Leakage MARKING Small Body Outline: 1.0 mm x 0.6 mm DIAGRAM Protection for the following IEC Standards: IEC6100042 Level 4: 30 kV Contact Discharge QM X2DFN2 IEC6100045 (Lightning) 43 A (8/20 s) CASE 714AB These Devices are PbFree, Halogen Free/BFR Free and are RoHS Q = Specific Device Code Compliant M = Date Code Typical Applications Battery Line Protection Audio Line Protection ORDERING INFORMATION GPIO Device Package Shipping NSPM3042MXT5G X2DFN2 8000 / Tape & MAXIMUM RATINGS (PbFree) Reel Rating Symbol Value Unit For information on tape and reel specifications, IEC 6100042 (ESD) Contact 30 kV including part orientation and tape sizes, please Air 30 refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Operating Junction and Storage T , T 65 to +150 C J stg Temperature Range Maximum Peak Pulse Current I 43 A PP Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: September, 2018 Rev. 2 NSPM3042/DNSPM3042 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter R I Maximum Reverse Peak Pulse Current PP DYN I T I V Clamping Voltage I V V V R C PP C BR RWM V I V V V R RWM BR C V Working Peak Reverse Voltage RWM I T I Maximum Reverse Leakage Current V R R RWM DYN V Breakdown Voltage I BR T I PP I Test Current T BiDirectional Surge Protection *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V I/O Pin to GND Pin 1 to 2 4.8 V RWM Pin 2 to 1 4.5 Breakdown Voltage V I = 1 mA, I/O Pin to GND Pin 1 to 2 4.85 5.2 6.0 V BR T Pin 2 to 1 4.55 5.0 6.0 Reverse Leakage Current I V = 4.8 V, Pin 1 to Pin 2 0.5 A R RWM V = 4.5 V, Pin 2 to Pin 1 0.5 RWM Clamping Voltage V IEC6100042, 8 kV Contact See Figures 1 & 2 V C Clamping Voltage TLP (Note 1) V I = 8 A, IEC6100042 Level 2 Equivalent 5.50 V C PP (4 kV Contact, 8 kV Air) I = 16 A, IEC6100042 Level 4 Equivalent 5.74 PP (8 kV Contact, 15 kV Air) Reverse Peak Pulse Current I IEC6100045 (8 x 20 s) per Figure 14 43 A PP Clamping Voltage 8x20 s V I = 1 A 4.9 6.2 V C PP I = 43 A 7.4 8.0 Waveform per Figure 14 (Note 2) PP Dynamic Resistance R 100 ns TLP Pulse 0.03 DYN Junction Capacitance C V = 0 V, f = 1 MHz 80 200 pF J R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP condtions: Z = 50 , t = 100 ns, t = 1 ns, averaging window: t = 70 ns to t = 90 ns. 0 p r 1 2 2. Nonrepetitive current pulse at T = 25C, per IEC6100045 waveform. A www.onsemi.com 2