NSPM1042 ESD and Surge Protection Diode Features Protection for the following IEC Standards: www.onsemi.com IEC6100042 Level 4: 30 kV Contact Discharge IEC6100045 (Lightning) 200 A (8/20 s) These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Pin 1 Pin 2 MAXIMUM RATINGS Rating Symbol Value Unit MARKING IEC 6100042 (ESD) Contact 30 kV DIAGRAM Air 30 Operating Junction and Storage T , T 65 to +150 C J stg N3M UDFN2 Temperature Range CASE 517DF Maximum Peak Pulse Current I 200 A PP 8/20 s T = 25C, Pin 2 to Pin 1 A N3 = Specific Device Code M = Date Code Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Device Package Shipping NSPM1042MUTBG UDFN2 3000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: March, 2019 Rev. 0 NSPM1042/DNSPM1042 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter I Maximum Reverse Peak Pulse Current R PP DYN I T V Clamping Voltage I I V V V C PP R C BR RWM V I V V V V Working Peak Reverse Voltage R RWM BR C RWM I T I Maximum Reverse Leakage Current V R R RWM DYN V Breakdown Voltage I BR T I PP I Test Current T BiDirectional *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V Pin 1 to Pin 2 3.3 V RWM Reverse Working Voltage V Pin 2 to Pin 1 4.8 V RWM Breakdown Voltage V I = 1 mA, Pin 1 to Pin 2 4.5 4.7 5.5 V BR T Breakdown Voltage V I = 1 mA, Pin 2 to Pin 1 5.0 5.4 6.0 V BR T Reverse Leakage Current I V = 3.3 V, Pin 1 to Pin 2 0.05 0.1 A R RWM Reverse Leakage Current I V = 4.8 V, Pin 2 to Pin 1 0.05 0.1 A R RWM Clamping Voltage (Note 1) V I = 100 A, t = 8 x 20 s, Pin 2 to Pin 1 6.6 7.2 V C PP p Clamping Voltage (Note 1) V 7.6 8.4 V I = 150 A, t = 8 x 20 s, Pin 2 to Pin 1 C PP p Clamping Voltage (Note 1) V I = 180 A, t = 8 x 20 s, Pin 2 to Pin 1 8.2 9.1 V C PP p Clamping Voltage (Note 1) V I = 200 A, t = 8 x 20 s, Pin 2 to Pin 1 8.8 9.5 V C PP p Clamping Voltage TLP V V I = 8 A IEC 6100042 Level 2 equivalent 5.48 C PP (Note 2) (4 kV Contact, 8 kV Air) I = 16 A 5.55 PP IEC 6100042 Level 4 equivalent (8 kV Contact, 16 kV Air) Dynamic Resistance R TLP Pulse, Pin 1 to Pin 2 0.014 DYN Dynamic Resistance R TLP Pulse, Pin 2 to Pin 1 0.01 DYN Junction Capacitance C V = 0 V, f = 1 MHz 300 480 pF J R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Nonrepetitive current pulse at T = 25C, per IEC6100045 waveform. A 2. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z = 50 , t = 100 ns, t = 1 ns, averaging window t = 70 ns to t = 90 ns. 0 p r 1 2 www.onsemi.com 2