X-On Electronics has gained recognition as a prominent supplier of NSPM0101MUT5G ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. NSPM0101MUT5G ESD Suppressors / TVS Diodes are a product manufactured by ON Semiconductor. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

NSPM0101MUT5G ON Semiconductor

NSPM0101MUT5G electronic component of ON Semiconductor
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Part No.NSPM0101MUT5G
Manufacturer: ON Semiconductor
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes 10V TVS IN UDFN2
Datasheet: NSPM0101MUT5G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.484 ea
Line Total: USD 0.48 
Availability - 549
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
549
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.484
10 : USD 0.4792
25 : USD 0.4744
50 : USD 0.4694
100 : USD 0.4646
250 : USD 0.4598
500 : USD 0.455

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
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Minimum Operating Temperature
Maximum Operating Temperature
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Pd - Power Dissipation
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NSPM0101MUT5G from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NSPM0101MUT5G and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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NSPM0101 ESD Protection Diode Features Protection for the following IEC Standards: IEC6100042 Level 4: 30 kV Contact Discharge IEC6100045 (Lightning) 60 A (8/20 s) www.onsemi.com These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 1 2 MAXIMUM RATINGS Cathode Anode Rating Symbol Value Unit IEC 6100042 (ESD) Contact 30 kV Air 30 MARKING DIAGRAM Operating Junction and Storage T , T 65 to +150 C J stg Temperature Range UDFN2 Maximum Peak Pulse Current I 60 A EM PP CASE 517CZ 8/20 s T = 25C A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be E = Specific Device Code assumed, damage may occur and reliability may be affected. M = Date Code ORDERING INFORMATION Device Package Shipping NSPM0101MUT5G UDFN2 8000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: February, 2018 Rev. 3 NSPM0101/DNSPM0101 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V V V V Working Peak Reverse Voltage C BR RWM RWM V I V R F I Maximum Reverse Leakage Current V I R RWM T V Breakdown Voltage I BR T I Test Current T *See Application Note AND8308/D for detailed explanations of I PP datasheet parameters. UniDirectional ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V 10 V RWM Breakdown Voltage V I = 1 mA 12 V BR T Reverse Leakage Current I V = 10 V 0.5 A R RWM Clamping Voltage (Note 1) V I = 10 A 15 V C PP Clamping Voltage (Note 1) V I = 60 A 20 V C PP Dynamic Resistance R 100 ns TLP Pulse, I/O Pin to GND 0.05 DYN Junction Capacitance C V = 0 V, f = 1 MHz 400 pF J R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Nonrepetitive current pulse at T = 25C, per IEC6100045 waveform. A 16 0 14 2 12 4 10 6 8 8 6 10 4 12 2 14 0 16 0 5 10 15 20 25 30 30 25 20 15 10 5 0 Ipk (A) Ipk (A) Figure 1. Positive TLP IV Curve Figure 2. Negative TLP IV Curve www.onsemi.com 2 Vpk (V) Vpk (V)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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