X-On Electronics has gained recognition as a prominent supplier of BP 104 FS-Z Photodiodes across the USA, India, Europe, Australia, and various other global locations. BP 104 FS-Z Photodiodes are a product manufactured by OSRAM. We provide cost-effective solutions for Photodiodes, ensuring timely deliveries around the world.

BP 104 FS-Z OSRAM

BP 104 FS-Z electronic component of OSRAM
BP 104 FS-Z OSRAM
BP 104 FS-Z Photodiodes
BP 104 FS-Z  Optoelectronics

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See Product Specifications
Part No. BP 104 FS-Z
Manufacturer: OSRAM
Category: Photodiodes
Description: Photodiodes PHOTODIODE, SMT
Datasheet: BP 104 FS-Z Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0875 ea
Line Total: USD 1.09 
Availability - 31671
Ship by Tue. 11 Mar to Thu. 13 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
31671
Ship by Tue. 11 Mar to Thu. 13 Mar
MOQ : 1
Multiples : 1
1 : USD 1.0875
10 : USD 0.7513
100 : USD 0.4939
500 : USD 0.4147
1500 : USD 0.3586
24000 : USD 0.3564
49500 : USD 0.3454

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Reverse Voltage
Maximum Dark Current
Peak Wavelength
Rise Time
Fall Time
Half Intensity Angle Degrees
Package / Case
Mounting Style
Dark Current
Vr - Reverse Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Brand
Forward Current
Power Dissipation
Noise Equivalent Power - Nep
Photocurrent
Responsivity
Factory Pack Quantity :
Height
Packaging
Width
Cnhts
Hts Code
If - Forward Current
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
Vf - Forward Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BP 104 FS-Z from our Photodiodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BP 104 FS-Z and other electronic components in the Photodiodes category and beyond.

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2009-04-07 Silicon PIN Photodiode with Daylight Blocking Filter Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Version 1.0 BP 104 FS Features: Besondere Merkmale: Especially suitable for applications of 950 nm Speziell geeignet fr Anwendungen bei 950 nm Short switching time (typ. 20 ns) Kurze Schaltzeit (typ. 20 ns) DIL plastic package with high packing density DIL-Plastikbauform mit hoher Packungsdichte Applications Anwendungen Photointerrupters Lichtschranken Remote control Fernsteuerung Ordering Information Bestellinformation Type: Photocurrent Ordering Code Typ: Fotostrom Bestellnummer 2 = 950 nm, E = 1 mW/cm , V = 5 V e R I A P BP 104 FS 34 ( 25) Q65110A2627 Maximum Ratings (T = 25 C) A Grenzwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Operating and storage temperature range T T -40 ... 100 C op stg Betriebs- und Lagertemperatur Reverse voltage V 20 V R Sperrspannung Total power dissipation P 150 mW tot Verlustleistung 2009-04-07 1Version 1.0 BP 104 FS Characteristics (T = 25 C) A Kennwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Photocurrent I 34 ( 25) A P Fotostrom 2 (V = 5 V, E = 1 mW/cm , = 950 nm) R e Wavelength of max. sensitivity 950 nm S max Wellenlnge der max. Fotoempfindlichkeit Spectral range of sensitivity 800 ... 1100 nm 10% Spektraler Bereich der Fotoempfindlichkeit 2 Radiant sensitive area A4.84 mm Bestrahlungsempfindliche Flche Dimensions of radiant sensitive area L x W 2.2 x 2.2 mm x Abmessung der bestrahlungsempfindlichen mm Flche Half angle 60 Halbwinkel Dark current I 2 ( 30) nA R Dunkelstrom (V = 10 V) R Spectral sensitivity of the chip S 0.7 A / W typ Spektrale Fotoempfindlichkeit des Chips ( = 950 nm) Quantum yield of the chip 0.91 Electro Quantenausbeute des Chips ns ( = 950 nm) /Photon Open-circuit voltage V 330 ( 250) mV O Leerlaufspannung 2 (E = 0.5 mW/cm , = 950 nm) e Short-circuit current I 17 A SC Kurzschlussstrom 2 (E = 0.5 mW/cm , = 950 nm) e Rise and fall time t , t 0.02 s r f Anstiegs- und Abfallzeit (R = 50 V = 5 V = 850 nm I = 800 A) L R p Forward voltage V 1.3 V F Durchlassspannung (I = 100 mA, E = 0) F 2009-04-07 2

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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