X-On Electronics has gained recognition as a prominent supplier of 2SA10220CL Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SA10220CL Bipolar Transistors - BJT are a product manufactured by Panasonic. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SA10220CL Panasonic

2SA10220CL electronic component of Panasonic
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Part No.2SA10220CL
Manufacturer: Panasonic
Category: Bipolar Transistors - BJT
Description: TRANS PNP 20V 0.03A MINI-3P
Datasheet: 2SA10220CL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.4189
10 : USD 0.2688
100 : USD 0.193
500 : USD 0.1619
1000 : USD 0.1521
N/A

   
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RoHS - XON
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We are delighted to provide the 2SA10220CL from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SA10220CL and other electronic components in the Bipolar Transistors - BJT category and beyond.

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This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SA1022 Silicon PNP epitaxial planar type For high-frequency amplification Unit: mm Complementary to 2SC2295 +0.10 0.40 0.05 +0.10 0.16 0.06 3 Features High frequency voltage f T Mini type package, allowing downsizing of the equipment and 1 2 automatic insertion through the tape packing and the magazine (0.95) (0.95) packing 1.90.1 +0.20 2.90 0.05 10 Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit 1: Base Collector-base voltage (Emitter open) V 30 V CBO 2: Emitter Collector-emitter voltage (Base open) V 20 V CEO 3: Collector EIAJ: SC-59 Emitter-base voltage (Collector open) V 5V EBO Mini3-G1 Package Collector current I 30 mA C Marking Symbol: E Collector power dissipation P 200 mW C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Base-emitter voltage V V = 10 V, I = 1 mA 0.7 V BE CE C Collector-base cutoff current (Emitter open) I V = 10 V, I = 0 0.1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 20 V, I = 0 100 A CEO CE B Emitter-base cutoff current (Collector open) I V = 5 V, I = 0 10 A EBO EB C * Forward current transfer ratio h V = 10 V, I = 1 mA 70 220 FE CE C Collector-emitter saturation voltage V I = 10 mA, I = 1 mA 0.1 V CE(sat) C B Transition frequency f V = 10 V, I = 1 mA, f = 200 MHz 150 300 MHz T CB E Noise figure NF V = 10 V, I = 1 mA, f = 5 MHz 2.8 dB CB E Reverse transfer impedance Z V = 10 V, I = 1 mA, f = 2 MHz 22 rb CB E Reverse transfer capacitance C V = 10 V, I = 1 mA, f = 10.7 MHz 1.2 pF re CE C (Common emitter) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank B C h 70 to 140 110 to 220 FE Publication date: February 2003 SJC00009BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SA1022 P T I V V I C a C CE CE(sat) C 240 30 100 I / I = 10 T = 25C C B a 200 25 10 I = 250 A B 160 20 200 A 120 15 1 150 A T = 75C a 25C 80 10 100 A 25C 0.1 50 A 40 5 0 0 0.01 0 40 80 120 160 0 2 4 6 8 10 0.1 1 10 100 Ambient temperature T (C) Collector-emitter voltage V (V) Collector current I (mA) a CE C h I C V C V FE C ob CB re CE 6 120 5 I = 0 E V = 10 V CE I = 1 mA C f = 1 MHz f = 10.7 MHz T = 25C a T = 25C a 5 100 T = 75C 4 a 4 80 25C 3 25C 3 60 2 2 40 1 1 20 0 0 0 0.1 1 10 100 0.1 1 10 100 1 10 100 Collector-base voltage V (V) Collector current I (mA) Collector-emitter voltage V (V) CB C CE f I G I NF I T E P C E 600 24 5 V = 10 V CE V = 10 V V = 10 V CB CB f = 100 MHz f = 100 MHz T = 25C a T = 25C a T = 25C a 500 20 4 400 16 3 300 12 2 8 200 1 4 100 0 0 0 0.1 1 10 100 0.1 1 10 100 0.1 1 10 ( ) Collector current I (mA) ( ) Emitter current I mA Emitter current I mA C E E 2 SJC00009BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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