This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SA1123 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification Unit: mm 5.00.2 4.00.2 Complementary to 2SC2631 Features Satisfactory forward current transfer ratio h collector current I FE C characteristics. 0.70.1 High collector-emitter voltage (Base open) V CEO Small collector output capacitance (Common base, input open cir- cuited) C ob Makes up a complementary pair with 2SC2631, which is optimum +0.15 +0.15 0.45 0.45 0.1 0.1 for the pre-driver stage of a 20 W to 40 W output amplifier. +0.6 +0.6 2.5 2.5 0.2 0.2 Absolute Maximum Ratings T = 25C a 123 1: Emitter Parameter Symbol Rating Unit 2: Collector Collector-base voltage (Emitter open) V 150 V CBO 3: Base TO-92-B1 Package Collector-emitter voltage (Base open) V 150 V CEO Emitter-base voltage (Collector open) V 5V EBO Collector current I 50 mA C Peak collector current I 100 mA CP Collector power dissipation P 750 mW C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V I = 100 A, I = 0 150 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 0 5V EBO E C Collector-base cutoff current (Emitter open) I V = 100 V, I = 0 1 A CBO CB E * Forward current transfer ratio h V = 5 V, I = 10 mA 130 450 FE CE C Collector-emitter saturation voltage V I = 30 mA, I = 3 mA 1V CE(sat) C B Transition frequency f V = 10 V, I = 10 mA, f = 200 MHz 200 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 5 pF ob CB E (Common base, input open circuited) Noise voltage NV V = 40 V, I = 1 mA, G = 80 dB 150 300 mV CE C V R = 100 k , Function = FLAT g Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank R S T h 130 to 220 185 to 330 260 to 450 FE Publication date: March 2003 SJC00011BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SA1123 P T I V I V C a C CE C BE 1.0 80 120 V = 5 V CE T = 25C a 25C 100 0.8 T = 75C a I = 500 A 25C B 60 450 A 400 A 80 350 A 300 A 0.6 250 A 200 A 40 60 0.4 150 A 40 100 A 20 0.2 20 50 A 0 0 0 0 40 80 120 160 0 2 4 6 8 10 12 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature T (C) Collector-emitter voltage V (V) Base-emitter voltage V (V) a CE BE V I h I f I CE(sat) C FE C T E 100 600 300 I / I = 10 C B V = 5 V CE V = 10 V CB T = 25C a 500 250 10 400 200 T = 75C a 1 300 150 25C T = 75C a 25C 25C 200 100 0.1 25C 100 50 0.01 0 0 0.1 1 10 100 0.1 1 10 100 1 10 100 Collector current I (mA) Collector current I (mA) Emitter current I (mA) C C E C V ob CB 6 I = 0 E f = 1 MHz T = 25C a 5 4 3 2 1 0 1 10 100 Collector-base voltage V (V) CB 2 SJC00011BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.