DSC5G02 Silicon NPN epitaxial planar type For high-frequency amplication Unit: mm DSC2G02 in SMini3 type package Features High transition frequency f T Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: C5 Packaging DSC5G020L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit 1: Base 2: Emitter Collector-base voltage (Emitter open) V 30 V CBO 3: Collector Collector-emitter voltage (Base open) V 20 V CEO Panasonic SMini3-F2-B Emitter-base voltage (Collector open) V 3 V JEITA SC-85 EBO Code Collector current I 15 mA C Collector power dissipation P 150 mW C Junction temperature T 150 C j Operating ambient temperature T 40 to +85 C opr Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 mA, I = 0 30 V CBO C E Emitter-base voltage (Collector open) V I = 10 mA, I = 0 3 V EBO E C Base-emitter voltage V V = 6 V, I = 1 mA 0.72 V BE CE C 1 * Forward current transfer ratio h V = 6 V, I = 1 mA 65 260 FE CE C Transition frequency f V = 6 V, I = 1 mA 450 650 MHz T CE C Reverse transfer capacitance C V = 6 V, I = 1 mA , f = 10.7 MHz 0.6 pF re CE C (Common emitter) Power gain PG V = 6 V, I = 1 mA , f = 100 MHz 24 dB CE C Noise gure NF V = 6 V, I = 1 mA , f = 100 MHz 3.3 dB CE C Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Rank classication * Code C D 0 Rank C D No-rank h 65 to 160 100 to 260 65 to 260 FE Marking Symbol C5C C5D C5 Product of no-rank is not classied and have no marking symbol for rank. Publication date: March 2014 Ver. CED 1DSC5G02 DSC5G02 PC-Ta DSC5G02 IC-VCE DSC5G02 hFE-IC P T I V h I C a C CE FE C 250 20 200 V = 6 V T = 25C CE a 200 16 160 T = 85C a I = 120 A B 110 A 100 A 150 12 120 25C 90 A 80 A 70 A 40C 100 8 80 60 A 50 A 40 A 4 50 40 30 A 0 0 0 1 2 0 40 80 120 160 200 0 2 4 6 8 10 12 10 1 10 10 Ambient temperature T (C) Collector-emitter voltage V (V) a Collector current I (mA) CE C DSC5G02 VCEsat-IC DSC5G02 IC-VBE DSC5G02 Cob-VCB V I I V C V CE(sat) C C BE ob CB 10 20 2.0 I / I = 10 I = 0 C B E f = 1 MHz V = 6 V CE T = 25C 25C a 1.6 15 1 1.2 T = 85C a 10 40C T = 85C 0.8 a 25C 1 10 5 40C 0.4 2 10 0 0 1 2 10 1 10 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1 10 100 Collector current I (mA) Base-emitter voltage V (V) Collector-base voltage V (V) C BE CB DSC5G02 fT-IC f I T C 1 600 V = 6 V CE T = 25C a 1 200 800 400 0 1 2 10 1 10 10 Collector current I (mA) C Ver. CED 2 Transition frequency f (MHz) Collector-emitter saturation voltage V (V) ( ) Collector power dissipation P mW T CE(sat) C Collector current I (mA) Collector current I (mA) C C Collector output capacitance C (pF) Forward current transfer ratio h ob FE (Common base, input open circuited)