X-On Electronics has gained recognition as a prominent supplier of 70T653MS12BCGI SRAM across the USA, India, Europe, Australia, and various other global locations. 70T653MS12BCGI SRAM are a product manufactured by Renesas. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

70T653MS12BCGI Renesas

70T653MS12BCGI electronic component of Renesas
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Part No.70T653MS12BCGI
Manufacturer: Renesas
Category: SRAM
Description: SRAM 512K X 36 STD-PWR 2.5V DUAL PORT RAM
Datasheet: 70T653MS12BCGI Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 312.2564 ea
Line Total: USD 312.26 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 312.2564
10 : USD 302.4797

   
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We are delighted to provide the 70T653MS12BCGI from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 70T653MS12BCGI and other electronic components in the SRAM category and beyond.

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70T653M HIGH-SPEED 2.5V 512K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE Features True Dual-Port memory cells which allow simultaneous Full on-chip hardware support of semaphore signaling access of the same memory location between ports High-speed access Fully asynchronous operation from either port Commercial: 10/12/15ns (max.) Separate byte controls for multiplexed bus and bus Industrial: 12ns (max.) matching compatibility RapidWrite Mode simplifies high-speed consecutive write Sleep Mode Inputs on both ports cycles Single 2.5V (100mV) power supply for core Dual chip enables allow for depth expansion without LVTTL-compatible, selectable 3.3V (150mV)/2.5V (100mV) external logic power supply for I/Os and control signals on each port IDT70T653M easily expands data bus width to 72 bits or Includes JTAG functionality more using the Busy Input when cascading more than one Available in a 256-ball Ball Grid Array device Industrial temperature range (40C to +85C) is available Busy input for port contention management for selected speeds Interrupt Flags Green parts available, see ordering information Functional Block Diagram BE3L BE3R BE2L BE2R BE1L BE1R BE0L BE0R R/WL R/WR B B B B B B B B E E E E E E E E 0 1 2 3 3 2 1 0 CE0L CE0R L L L L R R R R CE1L CE1R OEL OER Dout0-8 L Dout0-8 R Dout9-17 L Dout9-17 R Dout18-26 L Dout18-26 R Dout27-35 L Dout27-35 R 512K x 36 MEMORY ARRAY I/O0L- I/O35L Di n L Di n R I/O0R -I/O35R A18R Address A18L Address ADDR L ADDR R Decoder Decoder A0R A0L CE0L ARBITRATION CE0R TDI TCK CE1L TMS INTERRUPT CE1R JTAG TDO TRST OEL OER SEMAPHORE LOGIC R/WL R/WR BUSYL BUSYR SEML SEMR (1) (1) INTL INTR ZZ NOTES: (2) (2) ZZL CONTROL ZZR LOGIC 1. INT is non-tri-state totem-pole outputs (push-pull). 2. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted. OPTx, INTx and the sleep mode pins themselves (ZZx) are not affected during sleep mode. 5679 drw 01 JUNE 2019 1 DSC-5679/870T653M High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM Industrial and Commercial Temperature Ranges Description The IDT70T653M is a high-speed 512K x 36 Asynchronous Dual- The IDT70T653M has a RapidWrite Mode which allows the designer Port Static RAM. The IDT70T653M is designed to be used as a stand- to perform back-to-back write operations without pulsing the R/W input alone 18874K-bit Dual-Port RAM. This device provides two independent each cycle. This is especially significant at the 10ns cycle time of the ports with separate control, address, and I/O pins that permit independent, IDT70T653M, easing design considerations at these high performance asynchronous access for reads or writes to any location in memory. An levels. automatic power down feature controlled by the chip enables (either CE0 The 70T653M can support an operating voltage of either 3.3V or 2.5V or CE1) permit the on-chip circuitry of each port to enter a very low standby on one or both ports, controlled by the OPT pins. The power supply for power mode. the core of the device (VDD) is at 2.5V. 2

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
ID4
IDT
IDT, Integrated Device Technology Inc
INTEGRATED DEVICE
INTEGRATED DEVICE TECHNOLOGY
INTEGRATED DEVICES TECH AID
Intersil
INTERSIL - FGC
Intersil(Renes as Electronics)
Intersil(Renesas Electronics)
ITS
REA
RENESAS
RENESAS (IDT)
RENESAS (INTERSIL)
Renesas / IDT
Renesas / Intersil
Renesas Electronics
Renesas Electronics America
RENESAS TECHNOLOGY
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