2SA2088FRAT106Q ROHM

AEC-Q101 Qualified Medium power transistor ( 60V, 0.5A) 2SA2088FRA Features Dimensions (Unit : mm) 1) High speed switching. (Tf : Typ. : 60ns at IC = 500mA) UMT3 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 2.0 0.9 3) Strong discharge power for inductive load and capacitance load. 0.3 0.2 0.7 4) Complements the 2SC5876 2SC5876FRA (3) ( ) ( ) 2 1 Applications 0.65 0.65 0.15 1.3 Small signal low frequency amplifier (1) Emitter High speed switching Each lead has same dimensions (2) Base (3) Collector Abbreviated symbol : VM Structure PNP Silicon epitaxial planar transistor Packaging specifications Package Taping Code T106 Type Basic ordering unit (pieces) 3000 2SA2088FRA2SA2088 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit VCBO V Collector-base voltage 60 VCEO V Collector-emitter voltage 60 VEBO V Emitter-base voltage 6 DC IC 0.5 A Collector current 1 Pulsed ICP 1.0 A 2 PC mW Power dissipation 200 Tj C Junction temperature 150 Tstg C Range of storage temperature 55 to 150 1 Pw=10ms 2 Each terminal mounted on a recommended land www.rohm.com 1/3 2011.03 - Rev.B c 2011 ROHM Co., Ltd. All rights reserved. 1.25 2.1 0.1Min. 2SA2088FRA Data Sheet Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Condition Collector-emitter breakdown voltage BVCEO 60 V IC= 1mA BVCBO V Collector-base breakdown voltage 60 IC= 100A BVEBO V Emitter-base breakdown voltage 6 IE= 100A Collector cut-off current ICBO 1.0 A VCB= 40V IEBO 1.0 A Emitter cut-off current VEB= 4V IC= 100mA Collector-emitter saturation voltage VCE (sat) 150 500 mV IB= 10mA VCE= 2V 270 DC current gain hFE 120 IC= 50mA 1 VCE= 10V Transition frequency fT 400 MHz IE=100mA f=10MHz VCB= 10V Corrector output capacitance Cob 10 pF IE=0A f=1MHz IC= 500mA 2 ton ns Turn-on time 35 IB1= 50mA tstg ns Storage time 100 IB2=50mA Fall time tf 60 ns VCC 25V 1 Non repetitive pulse 2 See Switching charactaristics measurement circuits hFE RANK Q 120270 Electrical characteristic curves 1000 1000 1000 Ta=25C VCE= 2V Ta=25C VCC= 25V IC / IB=10 / 1 tstg 100 VCE= 5V Ta=125C VCE= 3V 100 100 tf Ta=25C VCE= 2V Ta= 40C ton 10 1 10 10 0.01 0.1 1 0.001 0.01 0.1 1 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 Switching Time Fig.2 DC Current Gain vs. Fig.3 DC Current Gain vs. Collector Current () Collector Current () 10 10 10 IC / IB=10 / 1 Ta=25C IC / IB=10 / 1 1 1 IC / IB=100/1 Ta=125C IC / IB=20/1 1 Ta=25C IC / IB=10/1 Ta= 40C 0.1 0.1 Ta=125C Ta=25C Ta= 40C 0.01 0.01 0.1 0.001 0.01 0.1 1 0.001 0.01 0.1 1 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 Collector-Emitter Saturation Fig.5 Collector-Emitter Saturation Fig.6 Base-Emitter Saturation Voltage vs. Collector Current () Voltage vs. Collector Current () Voltage vs. Collecter Current www.rohm.com 2011.03 - Rev .B 2/3 c 2011 ROHM Co., Ltd. All rights reserved. COLLECTOR SATURATION SWITCHING TIME : (ns) VOLTAGE : VCE (sat) (V) COLLECTOR SATURATION DC CURRENT GAIN : hFE VOLTAGE : VCE (sat) (V) BASE EMITTER SATURATION DC CURRENT GAIN : hFE VOLTAGE : VBE (sat) (V)