STAC1011-350 STMicroelectronics

STAC1011-350 Datasheet LDMOS avionics radar transistor Features V P Order code Frequency Gain Efficiency DD OUT 1 STAC1011-350 1030 to 1090 MHz 36 V 350 W 15 dB 53 % Excellent thermal stability Common source configuration 2 P = 350W with 15 dB gain over 1030 to 1090 MHz OUT 3 ST air-cavity STAC packaging technology STAC780-2B Applications Avionics Pin connection Pin Connection Description 1 Drain The STAC1011-350 is a common source N-channel enhancement-mode lateral field- 2 Gate effect RF power transistor designed for avionics applications at frequencies range 1030 to 1090 MHz. 3 Source (bottom side) Product status link STAC1011-350 Product summary Order code STAC1011-350 Marking 1011-350 Package STAC780-2B Packing Tube Base/bulk quantity 15/90 DS8584 - Rev 8 - July 2020 www.st.com For further information contact your local STMicroelectronics sales office.STAC1011-350 Electrical data 1 Electrical data 1.1 Maximum ratings Table 1. Absolute maximum ratings (T = +25 C) CASE Symbol Parameter Value Unit V Drain-source voltage 80 V (BR)DSS V Gate-source voltage 20 V GS P Power dissipation (at T = +70 C) DISS CASE 1440 W T Maximum operating junction temperature +200 C J T Storage temperature range -65 to +150 C STG 1.2 Thermal data Table 2. Thermal data Symbol Parameter Value Unit R Junction-case thermal resistance 0.09 C/W thj-case Note: Thermal data at 50 s - 2% 1.3 ESD protection characteristics Table 3. ESD protection Symbol Test methodology Class HBM Human body model (per JESD22-A114) 2 DS8584 - Rev 8 page 2/16