X-On Electronics has gained recognition as a prominent supplier of STAC1011-350 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. STAC1011-350 RF MOSFET Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

STAC1011-350 STMicroelectronics

STAC1011-350 electronic component of STMicroelectronics
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Part No.STAC1011-350
Manufacturer: STMicroelectronics
Category: RF MOSFET Transistors
Description: RF MOSFET Transistors 350W 36V 1030-1090 MHz LDMOS TRANSISTOR
Datasheet: STAC1011-350 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
90: USD 241.4948 ea
Line Total: USD 21734.53 
Availability - 0
MOQ: 90  Multiples: 90
Pack Size: 90
Availability Price Quantity
0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 90
Multiples : 90
90 : USD 241.4948

0
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 217.6734

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
Output Power
Pd - Power Dissipation
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Series
Type
Brand
Number Of Channels
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STAC1011-350 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STAC1011-350 and other electronic components in the RF MOSFET Transistors category and beyond.

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STAC1011-350 Datasheet LDMOS avionics radar transistor Features V P Order code Frequency Gain Efficiency DD OUT 1 STAC1011-350 1030 to 1090 MHz 36 V 350 W 15 dB 53 % Excellent thermal stability Common source configuration 2 P = 350W with 15 dB gain over 1030 to 1090 MHz OUT 3 ST air-cavity STAC packaging technology STAC780-2B Applications Avionics Pin connection Pin Connection Description 1 Drain The STAC1011-350 is a common source N-channel enhancement-mode lateral field- 2 Gate effect RF power transistor designed for avionics applications at frequencies range 1030 to 1090 MHz. 3 Source (bottom side) Product status link STAC1011-350 Product summary Order code STAC1011-350 Marking 1011-350 Package STAC780-2B Packing Tube Base/bulk quantity 15/90 DS8584 - Rev 8 - July 2020 www.st.com For further information contact your local STMicroelectronics sales office.STAC1011-350 Electrical data 1 Electrical data 1.1 Maximum ratings Table 1. Absolute maximum ratings (T = +25 C) CASE Symbol Parameter Value Unit V Drain-source voltage 80 V (BR)DSS V Gate-source voltage 20 V GS P Power dissipation (at T = +70 C) DISS CASE 1440 W T Maximum operating junction temperature +200 C J T Storage temperature range -65 to +150 C STG 1.2 Thermal data Table 2. Thermal data Symbol Parameter Value Unit R Junction-case thermal resistance 0.09 C/W thj-case Note: Thermal data at 50 s - 2% 1.3 ESD protection characteristics Table 3. ESD protection Symbol Test methodology Class HBM Human body model (per JESD22-A114) 2 DS8584 - Rev 8 page 2/16

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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