HERAF808G C0G Taiwan Semiconductor

HERAF801G HERAF808G Taiwan Semiconductor 8A, 50V - 1000V High Efficient Rectifier FEATURES KEY PARAMETERS AEC-Q101 qualified available PARAMETER VALUE UNIT Glass passivated chip junction I 8 A F High efficiency, Low V F V 50 - 1000 V RRM High current capability High reliability I 150 A FSM High surge current capability T 150 C J MAX UL Recognized File E-326243 Package ITO-220AC RoHS Compliant Halogen-free according to IEC 61249-2-21 Configuration Single die APPLICATIONS DC to DC converter Switching mode converters and inverters Freewheeling application MECHANICAL DATA Case: ITO-220AC Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N m maximum ITO-220AC Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.70g (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A HERAF HERAF HERAF HERAF HERAF HERAF HERAF HERAF PARAMETER SYMBOL UNIT 801G 802G 803G 804G 805G 806G 807G 808G Marking code on HERAF HERAF HERAF HERAF HERAF HERAF HERAF HERAF the device 801G 802G 803G 804G 805G 806G 807G 808G Repetitive peak V 50 100 200 300 400 600 800 1000 V RRM reverse voltage Reverse voltage V 35 70 140 210 280 420 560 700 V R(RMS) total rms value Forward current I 8 A F Surge peak forward current, 8.3ms single half I 150 A FSM sine wave superimposed on rated load Junction T -55 to +150 C J temperature Storage T -55 to +150 C STG temperature 1 Version: K2105 HERAF801G HERAF808G Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-case resistance R 2 C/W JC ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT HERAF801G HERAF802G - 1.0 V HERAF803G HERAF804G (1) Forward voltage I = 8A, T = 25C V F J F HERAF805G - 1.3 V HERAF806G HERAF807G - 1.7 V HERAF808G T = 25C - 10 A J (2) Reverse current rated V I R R T = 125C - 400 A J HERAF801G HERAF802G HERAF803G 80 - pF HERAF804G Junction capacitance 1MHz, V = 4.0V C R J HERAF805G HERAF806G HERAF807G 60 - pF HERAF808G HERAF801G HERAF802G HERAF803G - 50 ns HERAF804G IF = 0.5A, IR = 1.0A Reverse recovery time t rr HERAF805G Irr = 0.25A HERAF806G HERAF807G - 80 ns HERAF808G Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION (1)(2) ORDERING CODE PACKAGE PACKING HERAF8xG ITO-220AC 50 / Tube ITO-220AC HERAF8xGH 50 / Tube Notes: 1. x defines voltage from 50V(HERAF801G) to 1000V(HERAF808G) 2. H means AEC-Q101 qualified 2 Version: K2105