SSM3J113TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J113TU High Speed Switching Applications 2.0V drive Unit: mm Low on-resistance: R = 449m (max) ( V = 2.0 V) on GS 2.10.1 R = 249m (max) ( V = 2.5 V) on GS 1.70.1 R = 169m (max) ( V = 4.0 V) on GS Absolute Maximum Ratings (Ta = 25C) 1 Characteristic Symbol Rating Unit 3 2 Drain-Source voltage V 20 V DS Gate-Source voltage V 12 V GSS DC I 1.7 D Drain current A Pulse I 3.4 DP P 800 D (Note 1) Drain power dissipation mW P 500 D (Note 2) Channel temperature T 150 C ch 1: Gate Storage temperature range T 55 to 150 C stg 2: Source 3: Drain Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in UFM temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEDEC absolute maximum ratings. JEITA Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling TOSHIBA 2-2U1A Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure Weight: 6.6 mg (typ.) rate, etc). Note 1: Mounted on ceramic board. (25.4 mm 25.4 mm 0.8 mm, Cu Pad: 645 mm2 ) Note 2: Mounted on FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm2 ) Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Conditions Min Typ. MaxUnit V I = 1 mA, V = 0 20 (BR) DSS D GS Drain-Source breakdown voltage V V I = 1 mA, V = +12V 8 (BR) DSX D GS Drain cut-off current I V = 20 V, V = 0 1 A DSS DS GS Gate leakage current I V = 12V, V = 0 1 A GSS GS DS Gate threshold voltage V V = 3 V, I = 0.1 mA 0.5 1.1 V th DS D Forward transfer admittance Y V = 3 V, I = 0.65 A (Note3) 1.3 2.7 S fs DS D I = 0.65 A, V = 4.0 V (Note3) 129 169 D GS Drain-Source on-resistance R I = 0.65 A, V = 2.5 V (Note3) 189 249 m DS (ON) D GS I = 0.65 A, V = 2.0 V (Note3) 249 449 D GS Input capacitance C V = 10 V, V = 0, f = 1 MHz 370 pF iss DS GS pF Output capacitance C V = 10 V, V = 0, f = 1 MHz 116 oss DS GS Reverse transfer capacitance C V = 10 V, V = 0, f = 1 MHz 73 pF rss DS GS Turn-on time t 33 on V = 10 V, I = 0.65 A, DD D Switching time ns V = 0 to 2.5 V, R = 4.7 Turn-off time t GS G 47 off Drain-Source forward voltage V I = 1.7 A, V = 0 V (Note3) 0.77 1.2 V DSF D GS Note3: Pulse test Start of commercial production 2005-06 1 2014-03-01 2.00.1 0.650.05 0.70.05 0.1660.05 +0.1 0.3 -0.05SSM3J113TU Switching Time Test Circuit (a) Test circuit (b) V IN 0 V OUT 10% 0 IN 90% 2.5V R L 2.5 V 10 s V DD (c) V V OUT DS (ON) 90% V = -10 V DD R = 4.7 G 10% Duty 1% V DD t t r f V : t , t < 5 ns IN r f Common Source t t on off Ta = 25C Marking Equivalent Circuit (top view) 3 3 JJ6 1 2 12 Precaution V can be expressed as the voltage between gate and source when the low operating current value is I =0.1mA for th D this product. For normal switching operation, V requires a higher voltage than V and V requires a lower GS (on) th, GS (off) voltage than V th. (The relationship can be established as follows: V < V < V ) GS (off) th GS (on) Take this into consideration when using the device. Handling Precaution When handling individual devices which are not yet mounted on a circuit board, be sure that the environment is protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 2 2014-03-01 R G