TLP2404(F) Toshiba

TLP2404 TOSHIBA PHOTOCOUPLER IRED & PHOTO-IC TLP2404 IPM (Intelligent Power Module) Unit: mm Industrial Inverter Operate at high ambient temperatures up to 125C The Toshiba TLP2404 consists of an infrared emitting diodes and integrated high gain, high-speed photodetectors. The TLP2404 is housed in the SO8 package. The output stage is an open collector type. The photodetector has an internal Faraday shield that provides a guaranteed common-mode transient immunity of 15 kV/s. TLP2404 guarantees minimum and maximum of propagation delay time, switching speed dispersion, and high common mode transient immunity. Therefore TLP2404 is suitable for isolation interface between IPM (Intelligent Power Module) and control IC circuits in motor control application. TOSHIBA 11 5K1S Inverter logic type (Open collector output) Weight: 0.11 gtyp. Package type: SO8 Guaranteed performance over temperature: -40 to 125C Power supply voltage: -0.5 to 30 V Threshold Input Current: I = 5.0 mA(max) FHL Propagation delay time (t /t ): t = 400ns (max) pHL pLH pHL Pin Configuration (Top View) t = 550ns (max) pLH Switching Time Dispersion ( t -t ): 400ns (max) V pHL pLH 1:NC 1 8 CC Common mode transient immunity: 15kV/s min 2:ANODE 3:CATHODE Isolation voltage: 3750Vrms min 7 2 4:NC UL-recognized: UL 1577, File No.E67349 5:GND cUL-recognized: CSA Component Acceptance Service No.5A 3 6 6:VO(Output) File No.E67349 GND 7:NC 4 5 SHIELD 8:VCC VDE-approved: EN 60747-5-5 (Note 1) Note 1: When a VDE approved type is needed, please designate the Option(V4). Schematic I CC V CC Truth Table I 8 I O F V 2 O Input LED Output 6 H ON L 3 L OFF H GND SHIELD 5 A bypass capacitor of 0.1F must be connected between pins 8 and 5. Start of commercial production 2009-11 2019 1 2019-06-03 Toshiba Electronic Devices & Storage Corporation TLP2404 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Forward Current I 25 mA F Forward Current Derating (Ta 110C) I /C -0.67 mA/C F Peak Transient Forward Current (Note 1) I 50 mA FPT Peak Transient Forward Current Derating (Ta 110C) I /C -1.34 mA/C FPT Reverse Voltage V 5 V R Input Power Dissipation PD 40 mW Input Power Dissipation Derating (Ta 110C) P /C -1.08 mW/C D Output Current (Ta 125C) I 15 mA O Output Voltage V -0.5 to 30 V O Supply Voltage V -0.5 to 30 V CC Output Power Dissipation P 80 mW O Output Power Dissipation Derating (Ta 110C) P /C -2.0 mW/C O Operating Temperature Range T -40 to 125 C opr Storage Temperature Range T -55 to 150 C stg Lead Soldering Temperature (10 s) T 260 C sol Isolation Voltage (AC,60 s, R.H. 60 %) (Note 2) BV 3750 V S rms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width 1 ms, duty=50 %. Note 2: This device is regarded as a two terminal device: pins 1, 2, 3 and 4 are shorted together, as are pins 5, 6, 7 and 8. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Input Current, High Level I 7.5 - 15 mA FH Input Voltage, Low Level V 0 - 0.8 V FL Supply Voltage* V 4.5 - 30 V CC Operating Temperature T -40 - 125 C opr * This item denotes operating range, not meaning of recommended operating conditions. Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2019 2 2019-06-03 Toshiba Electronic Devices & Storage Corporation Detector LED