TLP3555 Photocouplers Photorelay TLP3555TLP3555TLP3555TLP3555 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Mechanical relay replacements Security Systems Measuring Instruments Factory Automation (FA) Amusement Equipment 2. 2. 2. 2. GeneralGeneralGeneralGeneral The TLP3555 photorelay consists of a photo MOSFET optically coupled to an infrared LED. It is housed in a 4- pin DIP package. The low ON-state resistance and the high permissible ON-state current of the the TLP3555 make it suitable for power line control applications. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Normally opened (1-Form-A) (2) OFF-state output terminal voltage: 60 V (min) (3) Trigger LED current: 3 mA (max) (4) ON-state current: 2 A (max) (5) ON-state resistance: 200 m (max) (6) Isolation voltage: 2500 Vrms (min) (7) Safety standards UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 4. 4. 4. 4. Packaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin Assignment 1: Anode 2: Cathode 3: Drain 4: Drain 11-5B2S Start of commercial production 2011-11 2011-2020 2020-03-25 1 Toshiba Electronic Devices & Storage Corporation Rev.5.0TLP3555 5. 5. 5. 5. Internal CircuitInternal CircuitInternal CircuitInternal Circuit 6. Absolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 ) 6. 6. 6. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 ))) aaaa Characteristics Symbol Note Rating Unit LED Input forward current I 30 mA F Input forward current derating (T 25 ) I /T -0.3 mA/ a F a Input forward current (pulsed) (100 s pulse, 100 pps) I 1 A FP Input reverse voltage V 5 V R Input power dissipation P 50 mW D Input power dissipation derating (T 25 ) P /T -0.5 mW/ a D a Junction temperature T 125 j Detector OFF-state output terminal voltage V 60 V OFF ON-state current I 2 A ON ON-state current derating (T 25 ) I /T -20 mA/ a ON a ON-state current (pulsed) (t = 100 ms, duty = 1/10) I 6 A ONP Output power dissipation P 500 mW O Output power dissipation derating (T 25 ) P /T -5.0 mW/ a O a Junction temperature T 125 j Common Storage temperature T -55 to 125 stg Operating temperature T -40 to 85 opr Lead soldering temperature (10 s) T 260 sol Isolation voltage (AC, 60 s, R.H. 60 %) BV (Note 1) 2500 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: This device is considered as a two-terminal device: Pins 1 and 2 are shorted together, and pins 3 and 4 are shorted together. 7. 7. 7. 7. Recommended Operating Conditions (Note)Recommended Operating Conditions (Note)Recommended Operating Conditions (Note)Recommended Operating Conditions (Note) Characteristics Symbol Note Min Typ. Max Unit Supply voltage V 48 V DD Input forward current I 5 10 25 mA F ON-state current I 2 A ON Operating temperature T -20 65 opr Note: The recommended operating conditions are given as a design guide necessary to obtain the intended performance of the device. Each parameter is an independent value. When creating a system design using this device, the electrical characteristics specified in this data sheet should also be considered. 2011-2020 2020-03-25 2 Toshiba Electronic Devices & Storage Corporation Rev.5.0