BA679, BA679S www.vishay.com Vishay Semiconductors RF PIN Diodes - Single in MiniMELF (SOD-80) FEATURES Wide frequency range 10 MHz to 1 GHz AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS Current controlled HF resistance in adjustable attenuators MECHANICAL DATA click logo to get started DESIGN SUPPORT TOOLS Case: MiniMELF (SOD-80) Weight: approx. 31 mg Models Available Cathode band color: black Packaging codes/options: GS18/10K per 13 reel (8 mm tape), 10K/box GS08/2.5K per 7 reel (8 mm tape), 12.5K/box PARTS TABLE TYPE CIRCUIT PART ORDERING CODE TYPE MARKING REMARKS DIFFERENTIATION CONFIGURATION BA679 z > 5 k BA679-GS18 or BA679-GS08 - Single Tape and reel r BA679S z > 9 k BA679S-GS18 or BA679S-GS08 - Single Tape and reel r ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PART TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 30 V R Forward continuous current I 50 mA F THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT on PC board Thermal resistance junction to ambient air R 500 K/W thJA 50 mm x 50 mm x 1.6 mm Junction temperature T 125 C j Storage temperature range T -55 to +150 C stg ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 20 mA V 1V F F Reverse current V = 30 V I 0.05 A R R Diode capacitance f = 100 MHz, V = 0 V C 0.5 pF R D Differential forward resistance f = 100 MHz, I = 1.5 mA r 50 F f BA679 z5k r = 0 V Reverse impedance f = 100 MHz, V R BA679S z9k r Minority carrier lifetime I = 10 mA, I = 10 mA 4s F R Rev. 1.9, 27-Apr-17 Document Number: 85529 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BA679, BA679S www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 100 10 T = 25 C amb 1 Scattering Limit 0.1 0.01 0 0.4 0.8 1.2 1.6 2.0 95 9735 V - Forward Voltage (V) F Fig. 1 - Forward Current vs. Forward Voltage 10 000 1000 100 f > 20 MHz T = 25 C j 10 1 0.001 0.01 0.1 1 10 I - Forward Current (mA) 95 9734 F Fig. 2 - Differential Forward Resistance vs. Forward Current 20 - Circuitwith 10 dB Attenuation 0 V =40dBmV 0 f = 100 MHzunmodulated 1 - 20 - 40 - 60 - 80 0 20 40 60 80 95 9733 f , modulated with 200 kHz, m = 100 % (MHz) 2 Fig. 3 - Typ. Cross Modulation Distortion vs. Frequency f 2 Rev. 1.9, 27-Apr-17 Document Number: 85529 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 a - Typical Cross Modulation Distortion (dB) r - Differential Forward Resistance () I - Forward Current (mA) f F