BA779-2-G
www.vishay.com
Vishay Semiconductors
RF PIN Diodes - Dual Series
FEATURES
Wide frequency range 10 MHz to 1 GHz
3
AEC-Q101 qualified
Base P/N-HG3 - green, automotive grade
Material categorization:
For definitions of compliance please see
12 www.vishay.com/doc?99912
APPLICATIONS
Current controlled HF resistance in adjustable
attenuators
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.1 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
INTERNAL
PART ORDERING CODE TYPE MARKING REMARKS
CONSTRUCTION
BA779-2-G BA779-2-HG3-08 or BA779-2-HG3-18 PH2 Dual series Tape and reel
ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified)
amb
PART TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V 30 V
R
Forward continuous current I 50 mA
F
THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
on PC board
Thermal resistance junction to ambient air R 500 K/W
thJA
50 mm x 50 mm x 1.6 mm
Junction temperatureBase P/N-HG3 -
T 125 C
j
green, automotive grade
Storage temperature range T - 55 to + 150 C
stg
Operating temperature range T - 55 to + 125 C
op
ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I = 20 mA V 1V
F F
Reverse current V = 30 V I 0.05 A
R R
Diode capacitance f = 100 MHz, V = 0 V C 0.5 pF
R D
Differential forward resistance f = 100 MHz, I = 1.5 mA r 50
F f
Reverse impedance f = 100 MHz, V = 0 V BA779-2-G z5k
R r
Minority carrier lifetime I = 10 mA, I = 10 mA 4s
F R
Rev. 1.2, 25-Feb-13 Document Number: 83322
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000BA779-2-G
www.vishay.com
Vishay Semiconductors
TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
100
10
T = 25 C
amb
1
Scattering Limit
0.1
0.01
2.0
0 0.4 0.8 1.2 1.6
95 9735
V - Forward Voltage (V)
F
Fig. 1 - Forward Current vs. Forward Voltage
10 000
1000
100
f > 20 MHz
T = 25 C
j
10
1
10
0.001 0.01 0.1 1
95 9734 I - Forward Current (mA)
F
Fig. 2 - Differential Forward Resistance vs. Forward Current
20
- Circuitwith 10 dB Attenuation
0
V =40dBmV
0
f = 100 MHzunmodulated
1
- 20
- 40
- 60
- 80
0 20 40 60 80
f , modulated with 200 kHz, m = 100 % (MHz)
95 9733
2
Fig. 3 - Typ. Cross Modulation Distortion vs. Frequency f
2
Rev. 1.2, 25-Feb-13 Document Number: 83322
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
r - Differential Forward Resistance ()
a - Typical Cross Modulation Distortion (dB) f
I - Forward Current (mA)
F