X-On Electronics has gained recognition as a prominent supplier of VEMD1060X01 Photodiodes across the USA, India, Europe, Australia, and various other global locations. VEMD1060X01 Photodiodes are a product manufactured by Vishay. We provide cost-effective solutions for Photodiodes, ensuring timely deliveries around the world.

VEMD1060X01 Vishay

VEMD1060X01 electronic component of Vishay
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Part No.VEMD1060X01
Manufacturer: Vishay
Category: Photodiodes
Description: Photodiodes 0805 top view 350-1070nm +/-70 deg
Datasheet: VEMD1060X01 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.9014 ea
Line Total: USD 0.9 
Availability - 2742
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2742
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ : 1
Multiples : 1
1 : USD 0.9014
10 : USD 0.7417
30 : USD 0.6609
100 : USD 0.5821
500 : USD 0.5014
1000 : USD 0.477

   
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Dark Current
Vr - Reverse Voltage
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Maximum Operating Temperature
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If - Forward Current
Pd - Power Dissipation
Photocurrent
Factory Pack Quantity :
Cnhts
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We are delighted to provide the VEMD1060X01 from our Photodiodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VEMD1060X01 and other electronic components in the Photodiodes category and beyond.

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VEMD1060X01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES Package type: surface mount Package form: 0805 top view Dimensions (L x W x H in mm): 2 x 1.25 x 0.85 2 Radiant sensitive area (in mm ): 0.23 AEC-Q101 qualified High photo sensitivity High radiant sensitivity Excellent I linearity ra Suitable for visible and near infrared radiation DESCRIPTION Fast response times VEMD1060X01 is a high speed and high sensitive PIN Angle of half sensitivity: = 70 photodiode with a highly linear photoresponse. It is a low Floor life: 72 h, MSL 4, according to J-STD-020 profile surface mount device (SMD) including the chip with a Material categorization: for definitions of compliance 2 0.23 mm sensitive area detecting visible and near infrared please see www.vishay.com/doc 99912 radiation. APPLICATIONS High speed photo detector Small signal detection Proximity sensors PRODUCT SUMMARY COMPONENT I (A) (deg) (nm) ra 0.1 VEMD1060X01 1.8 70 350 to 1070 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMD1060X01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805 top view Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 20 V R Power dissipation T 25 C P 215 mW amb V Junction temperature T 110 C j Operating temperature range T -40 to +110 C amb Storage temperature range T -40 to +110 C stg Soldering temperature According to reflow solder profile Fig. 6 T 260 C sd Thermal resistance junction / ambient According to EIA / JESD 51 R 270 K/W thJA Rev. 1.1, 30-Jun-16 Document Number: 84295 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VEMD1060X01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V -0.9 1.1 V F F Breakdown voltage I = 100 A, E = 0 V 20 - - V R (BR) Reverse dark current V = 10 V, E = 0 I -0.01 5 nA R ro V = 0 V, f = 1 MHz, E = 0 C -3.8 - pF R D Diode capacitance V = 3 V, f = 1 MHz, E = 0 C -1.7 - pF R D 2 Open circuit voltage E = 1 mW/cm , = 950 nm V - 350 - mV e o 2 Temperature coefficient of V E = 1 mW/cm , = 950 nm TK --2.6- mV/K o e Vo 2 Short circuit current E = 1 mW/cm , = 950 nm I -1.8 - A e k 2 Temperature coefficient of I E = 1 mW/cm , = 835 nm TK -0.1 - %/K k e Ik 2 E = 1 mW/cm , = 950 nm, V = 5 V I 1.4 1.8 3 A e R ra Reverse light current 2 E = 1 mW/cm , = 890 nm, V = 5 V I -2.6 - A e R ra Angle of half sensitivity - 70 - deg Wavelength of peak sensitivity - 820 - nm p Range of spectral bandwidth - 350 to 1070 - nm 0.1 Rise time V = 5 V, R = 50 , = 830 nm t -60 - ns R L r Fall time V = 5 V, R = 50 , = 830 nm t -80 - ns R L f BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb Basic characteristics graphs to be extended to 110 C ambient temperatures where applicable. 100 1.4 V = 10 V R V = 10 V R 10 940 nm 1.2 1 865 nm 0.1 1.0 835 nm 0.01 0.8 0.001 0.0001 0.6 -40 -20 0 20 40 60 80 100 -40 -20 0 20406080 100 T - Ambient Temperature (C) T - Ambient Temperature (C) amb amb Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Rev. 1.1, 30-Jun-16 Document Number: 84295 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Reverse Dark Current (nA) ro I - Relative Reverse Light Current ra rel

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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