VS-30CTQ0.0S-M3, VS-30CTQ0.0-1-M3 Series www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 15 A FEATURES 150 C T operation J Center tap configuration Very low forward voltage drop High frequency operation 2 1 High purity, high temperature epoxy encapsulation for 1 3 enhanced mechanical strength and moisture resistance 2 2 D PAK (TO-263AB) 3 TO-262AA Guard ring for enhanced ruggedness and long term reliability Base Base common common Meets MSL level 1, per J-STD-020, LF maximum peak cathode cathode of 245 C 2 2 Designed and qualified according to JEDEC -JESD 47 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 2 2 1 1 Common 3 3 Common DESCRIPTION Anode cathode Anode Anode cathode Anode This center tap Schottky rectifier has been optimized for VS-30CTQ...S-M3 VS-30CTQ...-1-M3 very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 C junction temperature. Typical applications are PRIMARY CHARACTERISTICS in switching power supplies, converters, freewheeling I 2 x 15 A F(AV) diodes, and reverse battery protection. V 50 V, 60 V R V at I 0.56 V F F I 45 mA at 125 C RM T max. 150 C J E 13 mJ AS 2 Package D PAK (TO-263AB), TO-262AA Circuit configuration Common cathode MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 30 A F(AV) V 50/60 V RRM I t = 5 s sine 1000 A FSM p V 15 A , T = 125 C (per leg) 0.56 V F pk J T Range -55 to +150 C J VOLTAGE RATINGS VS-30CTQ050S-M3 VS-30CTQ060S-M3 PARAMETER SYMBOL UNITS VS-30CTQ050-1-M3 VS-30CTQ060-1-M3 Maximum DC reverse voltage V R 50 60 V Maximum working peak reverse voltage V RWM Revision: 27-Oct-17 Document Number: 94934 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-30CTQ0.0S-M3, VS-30CTQ0.0-1-M3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average per device 30 forward current I 50 % duty cycle at T = 105 C, rectangular waveform F(AV) C per leg 15 See fig. 5 A Maximum peak one cycle non-repetitive 5 s sine or 3 s rect. pulse Following any rated load 1000 surge current per leg I condition and with rated FSM 10 ms sine or 6 ms rect. pulse 260 See fig. 7 V applied RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 1.50 A, L = 11.5 mH 13 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 1.50 A AR Frequency limited by T maximum V = 1.5 x V typical J A R ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 15 A 0.62 T = 25 C J 30 A 0.82 Maximum forward voltage drop per leg (1) V V FM See fig. 1 15 A 0.56 T = 125 C J 30 A 0.71 T = 25 C 0.80 Maximum reverse leakage current per leg J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 45 J Threshold voltage V 0.39 V F(TO) T = T maximum J J Forward slope resistance r 8.47 m t Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 720 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and storage T , T -55 to 150 C J Stg temperature range Maximum thermal resistance, 3.25 junction to case per leg R DC operation C/W thJC Maximum thermal resistance, 1.63 junction to case per package Typical thermal resistance, R Mounting surface, smooth and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 30CTQ050S 2 Case style D PAK (TO-263AB) 30CTQ060S Marking device 30CTQ050-1 Case style TO-262AA 30CTQ060-1 Revision: 27-Oct-17 Document Number: 94934 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000