X-On Electronics has gained recognition as a prominent supplier of W29N01HVBINF NAND Flash across the USA, India, Europe, Australia, and various other global locations. W29N01HVBINF NAND Flash are a product manufactured by Winbond. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

W29N01HVBINF Winbond

W29N01HVBINF electronic component of Winbond
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Part No.W29N01HVBINF
Manufacturer: Winbond
Category: NAND Flash
Description: NAND Flash 1G-bit NAND flash, 3V, 4-bit ECC, 3V, x8
Datasheet: W29N01HVBINF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.5228 ea
Line Total: USD 3.52 
Availability - 75
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1

 W29N01HVBINF More Buying Options & Price Grid(s)

Availability Price Quantity
75
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 3.5228
10 : USD 3.234
100 : USD 2.9337
210 : USD 2.8875
420 : USD 2.876
1050 : USD 2.8644
2520 : USD 2.8182
5040 : USD 2.7951
10080 : USD 2.7951

Specifications

   
Manufacturer
Product Category
Mounting Style
Package / Case
Series
Memory Size
Interface Type
Organisation
Timing Type
Data Bus Width
Supply Voltage - Min
Supply Voltage - Max
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the W29N01HVBINF from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the W29N01HVBINF and other electronic components in the NAND Flash category and beyond.

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Additional Infomation About Product

W29N01HVXINF W29N01HVXINF 1G-BIT 3.3V NAND FLASH MEMORY th Release Date: January 11 , 2018 1 Revision D W29N01HVXINF Table of Contents 1. GENERAL DESCRIPTION ............................................................................................................... 6 2. FEATURES ....................................................................................................................................... 6 3. PACKAGE TYPES AND PIN CONFIGURATIONS .......................................................................... 7 3.1 Pin assignment 48-pin TSOP1(x8) ....................................................................................... 7 3.2 Pin assignment 48 ball VFBGA (x8) ..................................................................................... 8 3.3 Pin assignment 63 ball VFBGA ............................................................................................ 9 3.4 Pin Descriptions .................................................................................................................. 10 4. PIN DESCRITPIONS ...................................................................................................................... 11 4.1 Chip Enable ( CE) .............................................................................................................. 11 4.2 Write Enable ( WE) ............................................................................................................ 11 4.3 Read Enable ( RE) ............................................................................................................ 11 4.4 Address Latch Enable (ALE) .............................................................................................. 11 4.5 Command Latch Enable (CLE) .......................................................................................... 11 4.6 Write Protect ( WP) ............................................................................................................ 11 4.7 Ready/Busy (RY/ BY) ........................................................................................................ 11 4.8 Input and Output (I/Ox) ....................................................................................................... 11 5. BLOCK DIAGRAM .......................................................................................................................... 12 6. MEMORY ARRAY ORGANIZATION .............................................................................................. 13 6.1 Array Organization (x8) ...................................................................................................... 13 7. MODE SELECTION TABLE ........................................................................................................... 14 8. COMMAND TABLE......................................................................................................................... 15 9. DEVICE OPERATIONS .................................................................................................................. 16 9.1 READ operation .................................................................................................................. 16 9.1.1 PAGE READ (00h-30h)......................................................................................................... 16 9.1.2 RANDOM DATA OUTPUT (05h-E0h) ................................................................................... 17 9.1.3 READ ID (90h) ...................................................................................................................... 17 9.1.4 READ PARAMETER PAGE (ECh) ....................................................................................... 18 9.1.5 READ STATUS (70h)............................................................................................................ 21 9.2 PROGRAM operation ......................................................................................................... 22 9.2.1 PAGE PROGRAM (80h-10h) ................................................................................................ 22 9.2.2 SERIAL DATA INPUT (80h) .................................................................................................. 22 9.2.3 RANDOM DATA INPUT (85h) .............................................................................................. 23 9.3 COPY BACK operation....................................................................................................... 24 9.3.1 READ for COPY BACK (00h-35h) ........................................................................................ 24 9.3.2 PROGRAM for COPY BACK (85h-10h) ................................................................................ 24 9.4 BLOCK ERASE operation .................................................................................................. 26 9.4.1 BLOCK ERASE (60h-D0h) .................................................................................................... 26 9.5 RESET operation ................................................................................................................ 27 9.5.1 RESET (FFh) ........................................................................................................................ 27 9.6 WRITE PROTECT .............................................................................................................. 28 10. ELECTRICAL CHARACTERISTICS............................................................................................... 30 10.1 Absolute Maximum Ratings ................................................................................................ 30 10.2 Operating Ranges .............................................................................................................. 30 th Release Date: January 11 , 2018 2 Revision D

HS Compliance

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

Winbond Elec may also be referenced as

WINBOND ELECTRONICS
WINBOND ELECTRONICS CORP AMERICA

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