X-On Electronics has gained recognition as a prominent supplier of W29N01HVBINF NAND Flash across the USA, India, Europe, Australia, and various other global locations. W29N01HVBINF NAND Flash are a product manufactured by Winbond. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

W29N01HVBINF Winbond

Name: W29N01HVBINF
Brand: Winbond
SKU: W29N01HVBINF_Winbond
Availability: InStock
Rating: 5 (11 reviews)

W29N01HVBINF electronic component of Winbond

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See Product Specifications

Part No.	W29N01HVBINF
Manufacturer:	Winbond
Category:	NAND Flash
Description:	NAND Flash 1G-bit NAND flash, 3V, 4-bit ECC, 3V, x8
Datasheet:	W29N01HVBINF Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 4.0031 ea
Line Total: USD 4

Availability - 75
Ship by Wed. 05 Feb to Fri. 07 Feb

MOQ: 1 Multiples: 1
Pack Size: 1

W29N01HVBINF More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

75

Ship by Wed. 05 Feb to Fri. 07 Feb

MOQ : 1
Multiples : 1

1 : USD 4.0031
10 : USD 3.381
100 : USD 2.9337
210 : USD 2.876
420 : USD 2.8644
2520 : USD 2.8528
5040 : USD 2.8413
10080 : USD 2.8297

Specifications

Manufacturer

Winbond Winbond

Product Category

NAND Flash NAND Flash

Mounting Style

SMD/SMT SMD/SMT

Package / Case

VFBGA - 63 VFBGA - 63

Series

W29N01HV W29N01HV

Memory Size

1 Gbit 1 Gbit

Interface Type

Parallel Parallel

Organisation

128 M x 8 128 M x 8

Timing Type

Asynchronous Asynchronous

Data Bus Width

8 bit 8 bit

Supply Voltage - Min

2.7 V 2.7 V

Supply Voltage - Max

3.6 V 3.6 V

Supply Current - Max

35 mA 35 mA

Minimum Operating Temperature

- 40 C - 40 C

Maximum Operating Temperature

+ 85 C + 85 C

Packaging

Tray Tray

Hts Code

8542320051 8542320051

Notes:- Show Stocked Products With Similar Attributes.

W29N01HVBINF Alternative Parts

We are delighted to provide the W29N01HVBINF from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the W29N01HVBINF and other electronic components in the NAND Flash category and beyond.

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Additional Infomation About Product

W29N01HVXINF W29N01HVXINF 1G-BIT 3.3V NAND FLASH MEMORY th Release Date: January 11 , 2018 1 Revision D W29N01HVXINF Table of Contents 1. GENERAL DESCRIPTION ............................................................................................................... 6 2. FEATURES ....................................................................................................................................... 6 3. PACKAGE TYPES AND PIN CONFIGURATIONS .......................................................................... 7 3.1 Pin assignment 48-pin TSOP1(x8) ....................................................................................... 7 3.2 Pin assignment 48 ball VFBGA (x8) ..................................................................................... 8 3.3 Pin assignment 63 ball VFBGA ............................................................................................ 9 3.4 Pin Descriptions .................................................................................................................. 10 4. PIN DESCRITPIONS ...................................................................................................................... 11 4.1 Chip Enable ( CE) .............................................................................................................. 11 4.2 Write Enable ( WE) ............................................................................................................ 11 4.3 Read Enable ( RE) ............................................................................................................ 11 4.4 Address Latch Enable (ALE) .............................................................................................. 11 4.5 Command Latch Enable (CLE) .......................................................................................... 11 4.6 Write Protect ( WP) ............................................................................................................ 11 4.7 Ready/Busy (RY/ BY) ........................................................................................................ 11 4.8 Input and Output (I/Ox) ....................................................................................................... 11 5. BLOCK DIAGRAM .......................................................................................................................... 12 6. MEMORY ARRAY ORGANIZATION .............................................................................................. 13 6.1 Array Organization (x8) ...................................................................................................... 13 7. MODE SELECTION TABLE ........................................................................................................... 14 8. COMMAND TABLE......................................................................................................................... 15 9. DEVICE OPERATIONS .................................................................................................................. 16 9.1 READ operation .................................................................................................................. 16 9.1.1 PAGE READ (00h-30h)......................................................................................................... 16 9.1.2 RANDOM DATA OUTPUT (05h-E0h) ................................................................................... 17 9.1.3 READ ID (90h) ...................................................................................................................... 17 9.1.4 READ PARAMETER PAGE (ECh) ....................................................................................... 18 9.1.5 READ STATUS (70h)............................................................................................................ 21 9.2 PROGRAM operation ......................................................................................................... 22 9.2.1 PAGE PROGRAM (80h-10h) ................................................................................................ 22 9.2.2 SERIAL DATA INPUT (80h) .................................................................................................. 22 9.2.3 RANDOM DATA INPUT (85h) .............................................................................................. 23 9.3 COPY BACK operation....................................................................................................... 24 9.3.1 READ for COPY BACK (00h-35h) ........................................................................................ 24 9.3.2 PROGRAM for COPY BACK (85h-10h) ................................................................................ 24 9.4 BLOCK ERASE operation .................................................................................................. 26 9.4.1 BLOCK ERASE (60h-D0h) .................................................................................................... 26 9.5 RESET operation ................................................................................................................ 27 9.5.1 RESET (FFh) ........................................................................................................................ 27 9.6 WRITE PROTECT .............................................................................................................. 28 10. ELECTRICAL CHARACTERISTICS............................................................................................... 30 10.1 Absolute Maximum Ratings ................................................................................................ 30 10.2 Operating Ranges .............................................................................................................. 30 th Release Date: January 11 , 2018 2 Revision D

HS Compliance

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

Winbond Elec may also be referenced as

WINBOND ELECTRONICS
WINBOND ELECTRONICS CORP AMERICA

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Availability	Price	Buy Price	Quantity
75 Ship by Wed. 05 Feb to Fri. 07 Feb MOQ : 1 Multiples : 1	1 : USD 4.0031 10 : USD 3.381 100 : USD 2.9337 210 : USD 2.876 420 : USD 2.8644 2520 : USD 2.8528 5040 : USD 2.8413 10080 : USD 2.8297

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