X-On Electronics has gained recognition as a prominent supplier of W29N01HZBINA NAND Flash across the USA, India, Europe, Australia, and various other global locations. W29N01HZBINA NAND Flash are a product manufactured by Winbond. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

W29N01HZBINA Winbond

W29N01HZBINA electronic component of Winbond
W29N01HZBINA Winbond
W29N01HZBINA NAND Flash
W29N01HZBINA  Semiconductors

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See Product Specifications
Part No. W29N01HZBINA
Manufacturer: Winbond
Category: NAND Flash
Description: NAND Flash 1G-bit NAND flash 1.8V 1-bit ECC x8
Datasheet: W29N01HZBINA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 6.6573 ea
Line Total: USD 66.57 
Availability - 87
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ: 10  Multiples: 1
Pack Size: 1
Availability Price Quantity
87
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 10
Multiples : 1
10 : USD 6.6573
13 : USD 5.1623
25 : USD 4.784
50 : USD 4.3505

   
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We are delighted to provide the W29N01HZBINA from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the W29N01HZBINA and other electronic components in the NAND Flash category and beyond.

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W29N01HZ/W W29N01HZ/W 1G-BIT 1.8V NAND FLASH MEMORY th Release Date: January, 11 , 2018 1 Revision C W29N01HZ/W Table of Contents 1. GENERAL DESCRIPTION ............................................................................................................... 6 2. FEATURES ....................................................................................................................................... 6 3. PACKAGE TYPES AND PIN CONFIGURATIONS .......................................................................... 7 3.1 Pin assignment 48 pin TSOP1 (x8) ...................................................................................... 7 3.2 Pin assignment 48 ball VFBGA (x8) ..................................................................................... 8 3.3 Pin assignment 48 ball VFBGA (x16) ................................................................................... 9 3.4 Pin assignment 63 ball VFBGA (x8) ................................................................................... 10 3.5 Pin assignment 63 ball VFBGA (x16) ................................................................................. 11 3.6 Pin Descriptions .................................................................................................................. 12 4. PIN DESCRITPIONS ...................................................................................................................... 13 4.1 Chip Enable ( CE) .............................................................................................................. 13 4.2 Write Enable ( WE) ............................................................................................................ 13 4.3 Read Enable ( RE) ............................................................................................................ 13 4.4 Address Latch Enable (ALE) .............................................................................................. 13 4.5 Command Latch Enable (CLE) .......................................................................................... 13 4.6 Write Protect ( WP) ............................................................................................................ 13 4.7 Ready/Busy (RY/ BY) ........................................................................................................ 13 4.8 Input and Output (I/Ox) ....................................................................................................... 13 5. BLOCK DIAGRAM .......................................................................................................................... 14 6. MEMORY ARRAY ORGANIZATION .............................................................................................. 15 6.1 Array Organization (x8) ...................................................................................................... 15 6.2 Array Organization (x16) .................................................................................................... 16 7. MODE SELECTION TABLE ........................................................................................................... 17 8. COMMAND TABLE......................................................................................................................... 18 9. DEVICE OPERATIONS .................................................................................................................. 19 9.1 READ operation .................................................................................................................. 19 9.1.1 PAGE READ (00h-30h)......................................................................................................... 19 9.1.2 RANDOM DATA OUTPUT (05h-E0h) ................................................................................... 20 9.1.3 READ ID (90h) ...................................................................................................................... 20 9.1.4 READ PARAMETER PAGE (ECh) ....................................................................................... 21 9.1.5 READ STATUS (70h)............................................................................................................ 23 9.2 PROGRAM operation ......................................................................................................... 25 9.2.1 PAGE PROGRAM (80h-10h) ................................................................................................ 25 9.2.2 SERIAL DATA INPUT (80h) .................................................................................................. 25 9.2.3 RANDOM DATA INPUT (85h) .............................................................................................. 26 9.3 COPY BACK operation....................................................................................................... 27 9.3.1 READ for COPY BACK (00h-35h) ........................................................................................ 27 9.3.2 PROGRAM for COPY BACK (85h-10h) ................................................................................ 27 9.4 BLOCK ERASE operation .................................................................................................. 29 9.4.1 BLOCK ERASE (60h-D0h) .................................................................................................... 29 9.5 RESET operation ................................................................................................................ 30 9.5.1 RESET (FFh) ........................................................................................................................ 30 9.6 WRITE PROTECT .............................................................................................................. 31 th Release Date: January, 11 , 2018 2 Revision C

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
WINBOND ELECTRONICS
WINBOND ELECTRONICS CORP AMERICA
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