X-On Electronics has gained recognition as a prominent supplier of W29N02GVSIAA NAND Flash across the USA, India, Europe, Australia, and various other global locations. W29N02GVSIAA NAND Flash are a product manufactured by Winbond. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

W29N02GVSIAA Winbond

Name: W29N02GVSIAA
Brand: Winbond
SKU: W29N02GVSIAA_Winbond
Availability: OutOfStock
Rating: 5 (11 reviews)

W29N02GVSIAA electronic component of Winbond

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See Product Specifications

Part No.	W29N02GVSIAA
Manufacturer:	Winbond
Category:	NAND Flash
Description:	FLASH FLASH 2Gb (256M x 8) Parallel TSOP-48 RoHS
Datasheet:	W29N02GVSIAA Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

96: USD 5.0037 ea
Line Total: USD 480.36

Availability - 0

MOQ: 96 Multiples: 1
Pack Size: 1

W29N02GVSIAA More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Wed. 29 Jan to Tue. 04 Feb MOQ : 96 Multiples : 1	96 : USD 5.0037 100 : USD 4.9582 250 : USD 4.9114 500 : USD 4.8659 1000 : USD 4.8191 2000 : USD 4.7723 2500 : USD 4.7268 3000 : USD 4.68 5000 : USD 4.6332 10000 : USD 4.5864

0 Ship by Wed. 05 Feb to Mon. 10 Feb MOQ : 1 Multiples : 1	1 : USD 9.2822 10 : USD 8.1103 30 : USD 7.3969 100 : USD 6.5871 102 : USD 6.5871 104 : USD 6.5871

0 Ship by Mon. 27 Jan to Wed. 29 Jan Multiples : 1

Specifications

Manufacturer Winbond Winbond
Product Category NAND Flash NAND Flash
Package / Case TSOP - 48 TSOP - 48
Memory Size 2 gb (256M x 8) 2 gb (256M x 8)
Interface Type Parallel Parallel
Brand Winbond Winbond
Rohs Y Y
Memory Type Non - Volatile Non - Volatile
Memory Format FLASH FLASH
Voltage - Supply 2.7 V ~ 3.6 V 2.7 V ~ 3.6 V

We are delighted to provide the W29N02GVSIAA from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the W29N02GVSIAA and other electronic components in the NAND Flash category and beyond.

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Additional Infomation About Product

W29N02GV W29N02GV 2G-BIT 3.3V NAND FLASH MEMORY st Release Date: February 1 , 2016 1 Revision B W29N02GV Table of Contents 1. GENERAL DESCRIPTION ............................................................................................................ 7 2. FEATURES .................................................................................................................................... 7 3. PACKAGE TYPES AND PIN CONFIGURATIONS ....................................................................... 8 3.1 Pin assignment 48-pin TSOP1(x8) ....................................................................................... 8 3.2 Pin assignment 63 ball VFBGA (x8) ..................................................................................... 9 3.3 Pin Descriptions .................................................................................................................. 10 4. PIN DESCRITPIONS ................................................................................................................... 11 4.1 Chip Enable ( CE) .............................................................................................................. 11 4.2 Write Enable ( WE) ............................................................................................................ 11 4.3 Read Enable ( RE) ............................................................................................................. 11 4.4 Address Latch Enable (ALE) .............................................................................................. 11 4.5 Command Latch Enable (CLE) ........................................................................................... 11 4.6 Write Protect ( WP) ............................................................................................................ 11 4.7 Ready/Busy (RY/ BY) ........................................................................................................ 11 4.8 Input and Output (I/Ox) ....................................................................................................... 11 5. BLOCK DIAGRAM ....................................................................................................................... 12 6. MEMORY ARRAY ORGANIZATION ........................................................................................... 13 6.1 Array Organization (x8) ....................................................................................................... 13 7. MODE SELECTION TABLE ........................................................................................................ 14 8. COMMAND TABLE ...................................................................................................................... 15 9. DEVICE OPERATIONS ............................................................................................................... 17 9.1 READ operation .................................................................................................................. 17 9.1.1 PAGE READ (00h-30h) ........................................................................................................ 17 9.1.2 CACHE READ OPERATIONS .............................................................................................. 17 9.1.3 TWO PLANE READ (00h-00h-30h) ...................................................................................... 21 9.1.4 RANDOM DATA OUTPUT (05h-E0h) ................................................................................... 23 9.1.5 READ ID (90h) ...................................................................................................................... 25 9.1.6 READ PARAMETER PAGE (ECh) ....................................................................................... 26 9.1.7 READ STATUS (70h) ........................................................................................................... 28 9.1.8 READ STATUS ENHANCED (78h) ...................................................................................... 30 9.1.9 READ UNIQUE ID (EDh) ...................................................................................................... 31 9.2 PROGRAM operation ......................................................................................................... 32 9.2.1 PAGE PROGRAM (80h-10h) ................................................................................................ 32 9.2.2 SERIAL DATA INPUT (80h) ................................................................................................. 32 9.2.3 RANDOM DATA INPUT (85h) .............................................................................................. 33 9.2.4 CACHE PROGRAM (80h-15h) ............................................................................................. 33 9.2.5 TWO PLANE PAGE PROGRAM .......................................................................................... 35 9.3 COPY BACK operation ....................................................................................................... 38 9.3.1 READ for COPY BACK (00h-35h) ........................................................................................ 38 9.3.2 PROGRAM for COPY BACK (85h-10h) ................................................................................ 38 9.3.3 TWO PLANE READ for COPY BACK ................................................................................... 39 9.3.4 TWO PLANE PROGRAM for COPY BACK .......................................................................... 39 9.4 BLOCK ERASE operation .................................................................................................. 43 st Release Date: February 1 , 2016 2 Revision B

HS Compliance

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

Winbond Elec may also be referenced as

WINBOND ELECTRONICS
WINBOND ELECTRONICS CORP AMERICA

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