About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FGP3440G2_F085


Fairchild Semiconductor IGBT Transistors ECOSPARK 2 IGNITION IGBT
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ON Semiconductor Availability : 321
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USD 2.4131
Multiples of: 1

Single400 V1.6 V+/- 10 V26.9 A   TO - 220AB - 3TubeSiThrough Hole166 W- 40 C+ 175 CFgp3440g2_F085
FGP5N60UFDTU


IGBT Transistors 600V, 5A Field Stop
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ON Semiconductor Availability : 0
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USD 1.0623
Multiples of: 400

Single600 V +/- 20 V    TO - 220 - 3Tube Through Hole - 55 C+ 150 CFgp5n60
AOTF10B65M2


Transistor: IGBT; 650V; 10A; 12W; TO220F; Eoff: 0.13mJ; Eon: 0.18mJ
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Alpha & Omega Availability : 0
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USD 1.064
Multiples of: 1

  1.6 V   12 W         
LGB18N40ATH


Littelfuse D2PAK, IGBT3
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Littelfuse Availability : 0
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USD 1.066
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      115 W         
STGB14NC60KDT4


IGBT Transistors PowerMESH" IGBT
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STMicroelectronics Availability : 0
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USD 1.0674
Multiples of: 1000

Single600 V2.1 V+/- 20 V 2 A  D2PAK - 3ReelSiSmd/Smt - 55 C+ 150 CStgb14nc60kd
STGB3NC120HDT4


IGBT Transistors IGBT 1200V 7A PowerMESH Ultrafast
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STMicroelectronics Availability : 0
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USD 1.0685
Multiples of: 1

 1200 V2.3 V20 V14 A100 nA75 W D2PAKReelSiSmd/Smt75 W  Stgb3nc120hd
NGTB15N120IHLWG


IGBT Transistors 1200V/15A IGBT LPT TO-2
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ON Semiconductor Availability : 0
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USD 1.0706
Multiples of: 30

 1200 V 20 V30 A   TO - 247Tube Through Hole250 W  Ngtb15n120ihl
IRG4PH20KPBF


Transistor: IGBT; 1200V; 11A; 60W; TO247-3
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Infineon Availability : 0
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USD 1.0766
Multiples of: 25

Single1.2 kV3.17 V+/- 20 V11 A 60 W TO - 247TubeSiThrough Hole60 W- 55 C  
STGWT20H60DF


IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop
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STMicroelectronics Availability : 0
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USD 1.0776
Multiples of: 1

Single600 V2 V20 V40 A250 nA  TO - 3P - 3TubeSiThrough Hole167 W- 55 C+ 175 CStgwt20h60df
STGP10NB60SD


IGBT Transistors N-Ch 600 V 10 A Low Drop PowerMESH
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STMicroelectronics Availability : 0
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USD 1.0827
Multiples of: 50

Single600 V +/- 20 V  3.5 W TO - 220 - 3Tube Through Hole - 65 C+ 150 CStgp10nb60sd
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