About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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IXYN100N120B3H1

IGBT Transistors IGBT XPT-GENX3 SOT-227UI(

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IXYS

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USD 27.9504

Multiples of: 1

Tube

Planar

IXXX300N60C3

IGBT Transistors XPT 600V IGBT 300A

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IXYS

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USD 27.9871

Multiples of: 1

Tube

Ixxx300n60

GPU200HF120D2

IGBTs 62mm RoHS

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Daxin Semiconductor

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USD 28.0603

Multiples of: 1

IXXN100N60B3H1

IGBT Transistors XPT 600V IGBT GenX3 w/Diode

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IXYS

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USD 28.0665

Multiples of: 1

Tube

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APT70GR120J

IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8

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Microchip

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USD 28.0883

Multiples of: 1

NPT, POWER MOS 8®, Ultra Fast NPT - IGBT®

IXYN75N65C3D1

IGBT Transistors Disc IGBT XPT-GenX3 SOT-227UI(mini

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IXYS

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USD 29.1874

Multiples of: 1

Single

650 V

1.8 V

20 V

150 A

100 nA

SOT - 227B - 4

Screw Mount

600 W

- 55 C

+ 175 C

MG75U12MRGJ-A2-0000

IGBTs ROHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Yangjie

Availability : 0
Ship by 6 to 16 Weeks

May 2025

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USD 29.3633

Multiples of: 1

VS-GT140DA60U

IGBT Transistors 600 Volt 140 Amp

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Vishay

Availability : 0
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May 2025

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USD 29.3654

Multiples of: 80

FRED Pt®

GA35XCP12-247

IGBT Transistors 1200V 35A SIC IGBT CoPak

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GeneSiC Semiconductor

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May 2025

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USD 29.598

Multiples of: 510

1200 V

3 V

20 V

0.3 mA

TO - 247AB

Tube

Sic

Through Hole

- 40 C

+ 150 C

Ga35xcp12

GPU75HF120D1SE

IGBTs 34mm RoHS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Daxin Semiconductor

Availability : 0
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May 2025

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USD 29.6843

Multiples of: 1

IXYX140N120A4

IGBT Transistors XPT thin-wafer technology 4th generation GenX4 Trench IGBT. Disc IGBT XPT-GenX4 PLUS247

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IXYS

Availability : 0
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May 2025

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USD 29.8836

Multiples of: 1

Tube

IXGX100N170

IGBT Transistors HIGH VOLT NPT IGBTS 1700V 100A

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IXYS

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May 2025

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USD 30.587

Multiples of: 1

Single

1.7 kV

2.5 V

20 V

170 A

200 nA

PLUS 247 - 3

Tube

Through Hole

830 W

- 55 C

+ 150 C

Ixgx100n170

NTE3322

Transistor: IGBT; 900V; 60A; 170W; TO3P

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NTE

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USD 31.248

Multiples of: 1

170 W

IXYN82N120C3

IGBT Transistors 1200V XPT IGBT GenX3

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IXYS

Availability : 0
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May 2025

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USD 32.1973

Multiples of: 1

Single

1200 V

2.75 V

30 V

120 A

100 nA

SOT - 227B - 4

Tube

Smd/Smt

600 W

- 55 C

+ 175 C

Ixyn82n120

LEGM200BH120L2K

- IGBTs ROHS

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Leading Energy

Availability : 0
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May 2025

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USD 32.4119

Multiples of: 1

IXYK140N120A4

IGBT Transistors XPT thin-wafer technology 4th generation GenX4 Trench IGBT. Disc IGBT XPT-GenX4 TO264

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IXYS

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May 2025

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USD 32.974

Multiples of: 1

Tube

MG75UZ12MRGJ-A2-0000

IGBTs ROHS

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Yangjie

Availability : 0
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May 2025

May 2025
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USD 33.0102

Multiples of: 1

IXYN100N65A3

IGBT Transistors IGBT XPT-GENX3 (MINI

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IXYS

Availability : 0
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May 2025

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USD 33.264

Multiples of: 1

Tube

Planar

IXDN75N120

IGBT Transistors 75 Amps 1200V

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IXYS

Availability : 0
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May 2025

May 2025
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USD 33.3648

Multiples of: 1

Single Dual Emitter

1200 V

2.2 V

+/- 20 V

SOT - 227B - 4

Tube

Smd/Smt

- 40 C

+ 150 C

Ixdn75n120

IXGF25N300

IGBT Transistors

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IXYS

Availability : 0
Ship by 6 to 16 Weeks

May 2025