About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXGP24N120C3


IGBT Transistors 24 Amps 1200V
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IXYS Availability : 0
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USD 3.5342
Multiples of: 1

Single1.2 kV3.6 V20 V48 A100 nA  TO - 220 - 3TubeSiThrough Hole250 W- 55 C+ 150 CIxgp24n120
IRG4PH50KDPBF


International Rectifier IGBT Transistors 1200V ULTRAFAST 4-20 KHZ COPACK IGBT
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Infineon Availability : 0
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USD 3.5383
Multiples of: 1

Single1.2 kV3.5 V+/- 20 V45 A 200 W TO - 247TubeSiThrough Hole200 W- 55 C+ 150 C 
HGTG30N60B3D


Transistor: IGBT; 600V; 30A; 208W; TO247
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ON Semiconductor Availability : 0
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USD 3.5391
Multiples of: 30

                
FGH40N65UFDTU_F085


Fairchild Semiconductor IGBT Transistors N-ch 40A 650V IGBT
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ON Semiconductor Availability : 0
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USD 3.5532
Multiples of: 1

Single650 V1.8 V+/- 20 V80 A+/- 400 nA  TO - 247 - 3TubeSicThrough Hole290 W- 55 C+ 150 CFgh40n65uf_F085
AOK20B120D1


Transistor: IGBT; 1.2kV; 20A; 170W; TO247; 0.94mJ
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Alpha & Omega Availability : 0
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USD 3.5544
Multiples of: 1

  1.54 V   170 W         
MIW40N120-BP


IGBT Trench Field Stop 1200V 80A 277W Through Hole TO-247
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Micro Commercial Components (MCC) Availability : 0
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USD 3.5593
Multiples of: 1

        TO - 247 - 3Tube     -
IXSH10N60B2D1


IGBT Transistors 10 Amps 600V 2.5 Rds
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IXYS Availability : 0
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USD 3.575
Multiples of: 1

Single600 V2.5 V+/- 20 V +/- 100 nA100 W TO - 247 - 3Tube Through Hole - 55 C+ 150 CIxsh10n60
IXGA20N120


IGBT Transistors 40 Amps 1200V 2.5 Rds
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IXYS Availability : 0
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USD 3.5794
Multiples of: 50

Single1200 V3 V20 V    TO - 263 - 3TubeSiSmd/Smt - 55 C+ 150 CIxga20n120
IRGP30B60KD-EP


Transistor: IGBT; 600V; 60A; 304W; TO247-3
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Infineon Availability : 0
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USD 3.5894
Multiples of: 1

Single600 V2.35 V+/- 20 V60 A 304 W TO - 247TubeSiThrough Hole304 W- 55 C  
IRGP4263-EPBF


International Rectifier IGBT Transistors IR IGBT 600V 650V 48A TO-247AD
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Infineon Availability : 0
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USD 3.6036
Multiples of: 1

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