About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FGH60T65SQD-F155


IGBT Transistors 650V 60A FS4 TRENCH
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 0
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USD 5.6481

Multiples of: 1

Single650 V1.6 V20 V120 A400 nA  TO - 247 - 3Tube Through Hole333 W- 55 C+ 175 C 
FGH40T120SQDNL4


IGBT Transistors IGBT 1200V 40A UFS
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ON Semiconductor Availability : 0
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USD 5.6669

Multiples of: 1

Single1200 V1.78 V20 V160 A200 nA  TO - 247 - 4Tube Through Hole454 W- 55 C+ 175 C 
IRGP4263DPBF


International Rectifier IGBT Transistors 650V Lo VCEon Trench Co-Pack IGBT
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Infineon Availability : 0
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USD 5.6706

Multiples of: 1

Single650 V1.7 V20 V90 A100 nA  TO - 247AC - 3TubeSiThrough Hole325 W- 40 C+ 175 C 
IXXH50N60C3


IGBT Transistors XPT IGBT C3-Class 600V/100 Amp
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IXYS Availability : 0
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USD 5.6755

Multiples of: 1

 600 V2.3 V20 V100 A100 nA  TO - 247ADTubeSiThrough Hole600 W- 55 C+ 150 CIxxh50n60
IXSH24N60AU1


IGBT Transistors 48 Amps 600V 2.7 Rds
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IXYS Availability : 0
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USD 5.7219

Multiples of: 1

Single600 V +/- 20 V    TO - 247AD - 3Tube Through Hole - 55 C+ 150 CIxsh24n60
FGH75T65SHDT-F155


Trans IGBT Chip N-CH 650V 150A 455000mW 3-Pin(3+Tab) TO-247 Tube
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ON Semiconductor Availability : 0
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USD 5.7227

Multiples of: 1

Single        TubeTrench|Field Stop     
AUIRGP35B60PD-E


International Rectifier IGBT Transistors AUTO 600V WARP2 150KHZ 84mOhm
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Infineon Availability : 0
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USD 5.7253

Multiples of: 400

Single600 V2.15 V+/- 20 V60 A  Aec - Q101TO - 247AD - 3TubeSiThrough Hole308 W- 55 C  
IKZ75N65EH5


IGBT Transistors INDUSTRY 14
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Infineon Availability : 0
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USD 5.75

Multiples of: 1

                
FGH40T120SMDL4


Fairchild Semiconductor IGBT Transistors FS2 TIGBT excellent swtching performance
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ON Semiconductor Availability : 0
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USD 5.7959

Multiples of: 1

Single1.2 kV1.8 V+/- 25 V80 A+/- 400 nA  TO - 247 - 4TubeSiThrough Hole555 W- 55 C+ 175 CFgh40t120smdl4
IXGH32N60C


IGBT Transistors 60 Amps 600V 2.5 Rds
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IXYS Availability : 0
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USD 5.8064

Multiples of: 1

Single600 V +/- 20 V    TO - 247AD - 3Tube Through Hole - 55 C+ 150 CIxgh32n60
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