About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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IXEL40N400


IGBT Transistors 4000V 425ns IGBT
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IXYS Availability : 0
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USD 106.9455

Multiples of: 1

Single4000 V3 V20 V    Isoplus264 - 3TubeSiSmd/Smt - 40 C+ 125 CIxel40n400
IXBK64N250


IGBT Transistors BIMOSFET 2500V 75A
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IXYS Availability : 0
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USD 107.7564

Multiples of: 30

         TubeSi     
IXYF30N450


IGBT Transistors IGBT XPT-HI VOLTAGE
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IXYS Availability : 0
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USD 112.897

Multiples of: 1

         TubeSi    High Voltage
IRG4MC50F


Trans IGBT Chip N-CH 600V 35A 3-Pin(3+Tab) TO-254AA
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 115.2368

Multiples of: 50

                
MMIX4B22N300


Discrete Semiconductor Modules DISC IGBT SMPD PKG-BIMOSFET
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IXYS Availability : 0
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USD 115.8994

Multiples of: 1

Quad          Smd/Smt150 W- 55 C+ 150 C 
GPU450HF120D2SE


IGBTs 62mm RoHS
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Daxin Semiconductor Availability : 0
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USD 116.4453

Multiples of: 1

                
IXBL64N250


IXYS IGBT Transistors MOSFET 2500V 46A ISOPLUS I5-PAK
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IXYS Availability : 0
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USD 124.5883

Multiples of: 25

        ISOPLUS I5 - PAK - 3TubeSiThrough Hole    
IXGK75N250


IGBT Transistors
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IXYS Availability : 0
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USD 129.0027

Multiples of: 1

Single2500 V2.7 V30 V170 A200 nA  TO - 264TubeSiThrough Hole780 W- 55 C+ 150 C 
VS-GP400TD60S


IGBT Transistors Ic 400A Vce(On)1.30V Half Brdge Trench PT
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Vishay Availability : 0
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USD 162.3849

Multiples of: 1

Dual600 V-20 V758 A+/- 750 nA  DIAP SiChassis1.563 kW- 40 C+ 150 C 
VS-GA400TD60S


Vishay Semiconductors IGBT Transistors 600 Volt 400 Amp
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Vishay Availability : 0
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USD 204.1504

Multiples of: 1

Dual600 V 20 V750 A200 nA  DUAL in T - A - in KBulkSiSmd/Smt1563 W- 40 C+ 150 C 
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