About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKZA75N65SS5XKSA1


IGBT Trench Field Stop 650V 80A 395W Through Hole PG-TO247-4-3
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Infineon Availability : 510
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USD 8.9125

Multiples of: 1

        TO - 247 - 4Tube     Trenchstop 5
SGT40N60NPFDPN


IGBTs Field Stop 600V 80A TO-3P RoHS
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Silan Availability : 507
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USD 0.8084

Multiples of: 1

                
SGP10N60RUFDTU


IGBT Transistors Dis Short Circuit Rated IGBT
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ON Semiconductor Availability : 507
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USD 1.5

Multiples of: 1

Single600 V2.2 V+/- 20 V16 A+/- 100 nA75 W TO - 220 - 3TubeSiThrough Hole75 W- 55 C+ 150 CSgp10n60
FGP5N60LS


IGBT Transistors 600V/5A Field Stop Low Vcesat
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ON Semiconductor Availability : 500
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USD 0.7048

Multiples of: 1

 600 V1.8 V20 V10 A400 nA83 W TO - 220TubeSiThrough Hole83 W- 55 C+ 125 CFgp5n60
IGZ100N65H5XKSA1


Transistor: IGBT; 650V; 100A; 536W; TO247-4; Series: H5
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Infineon Availability : 500
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USD 4.209

Multiples of: 1

      536 W   Trenchstop 5    H5
CRG40T65AK5HD


TO-247 IGBTs ROHS
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CRMICRO Availability : 498
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USD 1.1194

Multiples of: 1

                
STGB10NB37LZT4


STMicroelectronics IGBT Transistors 10 A - 410 V Int Clamped IGBT
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STMicroelectronics Availability : 497
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USD 2.2534

Multiples of: 1

Single440 V 16 V   Aec - Q101D2PAK - 3ReelSiSmd/Smt - 65 C+ 150 CStgb10nb37lz
STGWT30H60DFB


STMicroelectronics IGBT Transistors
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STMicroelectronics Availability : 494
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USD 1.9638

Multiples of: 30

Single600 V1.55 V20 V60 A250 nA  TO - 3PTube Through Hole260 W- 55 C+ 175 C600 - 650V Igbts
SGT20T60SDM1P7


TO-247-3L IGBTs ROHS
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Silan Availability : 492
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USD 0.7236

Multiples of: 1

                
IKW20N60TFKSA1


Transistor: IGBT; 600V; 20A; 166W; TO247-3
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Infineon Availability : 492
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USD 2.0917

Multiples of: 1

      166 W   Trenchstop     
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