GT50N322A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50N322A Voltage Resonance Inverter Switching Application Unit: mm Fifth Generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : t = 0.10 s (typ.) (I = 60 A) f C FRD : t = 0.8 s (typ.) (di/dt = 20 A/ s) rr Low saturation voltage: V = 2.2 V (typ.) (I = 60 A) CE (sat) C Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-emitter voltage V 1000 V CES Gate-emitter voltage V 25 V GES DC I 50 C Collector current A 1ms I 120 CP JEDEC DC I 15 F JEITA Diode forward current A 1ms I 120 FP TOSHIBA 2-16C1C Collector power dissipation P 156 W C (Tc = 25C) Weight: 4.6 g (typ.) Junction temperature T 150 C j Storage temperature T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Marking Collector TOSHIBA Gate 50N322A Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Emitter 1 2008-01-11 GT50N322A Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 25 V, V = 0 500 nA GES GE CE Collector cut-off current I V = 1000 V, V = 0 1.0 mA CES CE GE Gate-emitter cut-off voltage V I = 60 mA, V = 5 V 3.0 6.0 V GE (OFF) C CE Collector-emitter saturation voltage V I = 60 A, V = 15 V 2.2 2.8 V CE (sat) C GE Input capacitance C V = 10 V, V = 0, f = 1 MHz 4000 pF ies CE GE t 0.23 Rise time Resistive Load r Turn-on time t V = 600 V, I = 60 A 0.33 on CC C Switching time s V = 15 V, R = 51 Fall time t GG G 0.10 0.25 f (Note 1) Turn-off time t 0.70 off Diode forward voltage V I = 15 A, V = 0 1.2 1.9 V F F GE Reverse recovery time t I = 15 A, V = 0, di/dt = 20 A/ s 0.8 s rr F GE Thermal Resistance Rth(j-c) 0.8 C/W Thermal Resistance Rth(j-c) 4.0 C/W Note 1: Switching time measurement circuit and input/output waveforms V GE 90% 10% 0 R G I C 0 90% 90% V CC 10% 10% V CE 0 t f t r t t off on 2 2008-01-11 10