About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKW15N120T2


Infineon Technologies IGBT Transistors LOW LOSS DuoPack 1200V 15A
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Infineon Availability : 58
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USD 2.3379

Multiples of: 1

Single1200 V2.2 V+/- 20 V30 A600 nA  TO - 247 - 3TubeSiThrough Hole235 W- 40 C+ 150 CIkw15n120
STGWT60H65DFB


STMicroelectronics IGBT Transistors 650V 60A HSpd trench gate field-stop IGBT
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STMicroelectronics Availability : 11
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USD 3.4552

Multiples of: 1

Single650 V1.6 V+/- 20 V80 A250 nA375 W TO - 3PTubeSiThrough Hole375 W- 55 C+ 175 CStgwt60h65dfb
NGTB75N60SWG


ON Semiconductor IGBT Transistors FSII 75A 600V Welding
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ON Semiconductor Availability : 11
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USD 3.6113

Multiples of: 1

Single600 V1.7 V+/- 20 V100 A200 nA  TO - 247 - 3TubeSiThrough Hole595 W- 55 C+ 175 C 
STGYA50H120DF2


IGBT Transistors Trench gate field-stop 1200 V 50 A high-speed H series IGBT
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STMicroelectronics Availability : 11
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USD 5.0115

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      535 W         
APT30GP60BG


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single
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Microchip Availability : 11
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USD 7.117

Multiples of: 1

         TubeSi     
APT65GP60L2DQ2G


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
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Microchip Availability : 11
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USD 23.1725

Multiples of: 1

      833 W   POWER MOS 7®, PT     
SL15T120FL1


TO-247 IGBTs ROHS
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SLKORMICRO Availability : 10
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USD 0.9592

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IKWH30N65WR5XKSA1


IGBT Transistors HOME APPLIANCES 14
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Infineon Availability : 10
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USD 2.708

Multiples of: 1

                
RGCL60TK60DGC11


IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
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ROHM Availability : 10
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USD 4.05

Multiples of: 1

Single600 V1.4 V30 V30 A200 nA  TO - 3PFMTubeSiThrough Hole54 W- 40 C+ 175 C 
IXBF20N300


IGBT Transistors IGBT BIMSFT-VERYHIVOLT
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IXYS Availability : 10
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USD 71.218

Multiples of: 1

Single3 kV2.7 V+/- 20 V34 A   ISOPLUS - I4 - 3TubeSiThrough Hole150 W- 55 C+ 150 C 
VS-GP300TD60S


IGBT Transistors Ic 300A Vce(On)1.30V Half Brdge Trench PT
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Vishay Availability : 10
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USD 191.2176

Multiples of: 1

Dual600 V-20 V580 A+/- 500 nA  DIAP SiChassis1.136 kW- 40 C+ 150 C 
IKN06N60RC2ATMA1


IGBT Transistors HOME APPLIANCES 14
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Infineon Availability : 9
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USD 0.7902

Multiples of: 1

                
SPT15N120T1


TO-247-3 IGBTs ROHS
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SPTECH Availability : 9
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USD 1.1533

Multiples of: 1

                
CGWT40N65F2KAD


TO-247-3L IGBTs ROHS
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Changjing Electronics Technology Availability : 9
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USD 1.2528

Multiples of: 1

                
STGF19NC60KD


igbts 600v 16a to-220f (to-220is) rohs
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STMicroelectronics Availability : 9
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USD 1.4505

Multiples of: 1

                
IHW30N135R5XKSA1


IGBT Transistors TRENCHSTOP RC-H5 1200V IGBT
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Infineon Availability : 9
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USD 1.9253

Multiples of: 1

Single1350 V1.65 V20 V60 A100 uA  TO - 247 - 3TubeSiThrough Hole330 W- 40 C+ 175 CRc - H5
IKB20N60H3ATMA1


IGBT Transistors HOME APPLIANCES 14
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Infineon Availability : 9
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USD 2.0197

Multiples of: 1

         Reel      
IKW30N60DTP


IGBT Transistors INDUSTRY 14
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Infineon Availability : 9
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USD 2.1439

Multiples of: 1

                
STGW20IH125DF


STMicroelectronics IGBT Transistors 1250V 20A trench gate field-stop IGBT
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STMicroelectronics Availability : 9
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USD 2.1785

Multiples of: 1

Single1.25 kV2.55 V20 V40 A250 nA  TO - 247 - 3TubeSiThrough Hole259 W- 55 C+ 175 C900 - 1300V Igbts
AIGB40N65H5ATMA1


IGBT Transistors DISCRETE SWITCHES
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 9
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USD 3.683

Multiples of: 1

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