About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IRGP4066DPBF


IGBT Transistors 600V UltraFast Trench IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 118
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USD 3.547

Multiples of: 1

Single600 V2.1 V+/- 20 V140 A 454 W TO - 247TubeSiThrough Hole454 W- 55 C  
AOK50B60D1


Transistor: IGBT; 600V; 50A; 125W; TO247; Eoff: 0.5mJ; Eon: 2.37mJ
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Alpha & Omega Availability : 118
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USD 3.7556

Multiples of: 1

  1.85 V   125 W         
IHW50N65R5


Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop 5
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Infineon Availability : 117
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USD 2.373

Multiples of: 1

Single650 V1.35 V20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole282 W- 40 C+ 175 CTrenchstop 5 Rc - H
STGD7NC60HT4


IGBT Transistors N-Ch 600 Volt 14 Amp
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STMicroelectronics Availability : 116
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USD 0.9902

Multiples of: 1

Single600 V2.5 V+/- 20 V25 A+/- 100 nA70 W TO - 252 - 3ReelSiSmd/Smt70 W- 55 C+ 150 CStgd7nc60h
IKFW50N65EH5XKSA1


IGBT Trench Field Stop 650V 59A 124W Through Hole PG-HSIP247-3-2
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Infineon Availability : 116
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USD 3.795

Multiples of: 1

        TO - 247 - 3Tube     Trenchstop 5
IKW40N60H3


IGBT Transistors 600V 40A 306W
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Infineon Availability : 111
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USD 2.8175

Multiples of: 1

Single600 V1.95 V20 V40 A100 nA306 W TO - 247TubeSiThrough Hole306 W- 40 C+ 150 CIkw40n60
IRGSL4062DPBF


Transistor: IGBT; 600V; 48A; 250W; TO262
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Infineon Availability : 108
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USD 1.3971

Multiples of: 1

Single600 V1.95 V+/- 20 V48 A 250 W TO - 262TubeSiThrough Hole250 W- 55 C  
FGH40T65UQDF-F155


IGBT Transistors 650V FS4 Trench IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 107
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USD 2.7375

Multiples of: 1

Single650 V1.33 V+/- 20 V80 A400 nA  TO - 247 - 3  Through Hole231 W- 55 C+ 175 C 
SPT50N65F1A1


TO-247-3 IGBTs ROHS
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SPTECH Availability : 106
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USD 2.0555

Multiples of: 1

                
APT25GR120B


IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
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Microchip Availability : 106
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USD 5.7819

Multiples of: 1

      521 W   NPT, POWER MOS 8®     
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