About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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First...8182838485...
First...8182838485...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
Hot IKW50N65ES5


IGBT Transistors Trenchstop 5 IGBT
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Infineon Availability : 32
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USD 2.9913
Multiples of: 1

Single650 V1.35 V+/- 20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole274 W- 40 C+ 175 CTrenchstop 5 S5
IGW25T120FKSA1


Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247
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Infineon Availability : 32
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USD 3.3345
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         Tube      
DG120X07T2


Transistor: IGBT; 650V; 120A; 893W; TO247PLUS
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STARPOWER Availability : 32
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USD 10.752
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      893 W         
IXA20PG1200DHGLB


IGBT Transistors XPT IGBT Phaseleg
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IXYS Availability : 32
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USD 11.5215
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          Si    Ixa20pg1200dhglb
APT80GA60LD40


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Combi
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Microchip Availability : 32
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USD 12.098
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Single600 V2 V30 V143 A100 nA  TO - 264 - 3TubeSiSmd/Smt625 W- 55 C+ 150 C 
SPT40N120F1A1


TO-247-3 IGBTs ROHS
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SPTECH Availability : 32
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USD 3.2737
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FGY100T120RWD


TO-247-3 IGBTs ROHS
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ON Semiconductor Availability : 32
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USD 11.3896
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IGW50N65H5


IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
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Infineon Availability : 31
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USD 2.4375
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Single650 V1.65 V+/- 20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole305 W- 40 C+ 175 CTrenchstop 5 H5
IKW50N60TFKSA1


Transistor: IGBT; 600V; 80A; 333W; TO247-3
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Infineon Availability : 31
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USD 3.9215
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      333 W   Trenchstop     
APT30GP60BDQ1G


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
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Microchip Availability : 31
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USD 12.103
Multiples of: 1

      463 W   POWER MOS 7®, PT     
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