About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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IXBK55N300


IGBT Transistors IGBT BIMSFT-VERYHIVOLT
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IXYS Availability : 24
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USD 122.0019

Multiples of: 1

Single3 kV2.7 V25 V130 A+/- 200 nA  TO - 264 - 3TubeSiThrough Hole625 W- 55 C+ 150 CVery High Voltage
IRGR3B60KD2TRP


International Rectifier IGBT Transistors
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Infineon Availability : 23
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USD 1.1008

Multiples of: 1

Single600 V1.9 V+/- 20 V7.8 A100 nA  DPAK - 3ReelSiSmd/Smt52 W- 55 C+ 150 CRc
NGTB15N135IHRWG


Trans IGBT Chip N-CH 1.35KV 30A 3-Pin(3+Tab) TO-247 Rail
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ON Semiconductor Availability : 23
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USD 2.093

Multiples of: 1

Single        Rail/TubeSi    Ngtb15n135ihr
STGW40H65FB


IGBT Transistors 650V 40A Trench Gate Field-Stop IGBT
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STMicroelectronics Availability : 23
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USD 2.2279

Multiples of: 1

Single650 V1.6 V20 V80 A250 nA283 W TO - 247 - 3TubeSiThrough Hole283 W- 55 C+ 175 CStgw40h65fb
IHW30N160R5


IGBT Transistors HOME APPLIANCES 14
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Infineon Availability : 23
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USD 3.5788

Multiples of: 1

                
FGH75T65SHDTLN4


IGBT Transistors FS3 T TO247 75A 65
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ON Semiconductor Availability : 23
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USD 3.8418

Multiples of: 1

Single650 V1.6 V20 V150 A400 nA  TO - 247 - 4TubeSiThrough Hole455 W- 55 C+ 175 C 
RGT80TS65DGC13


IGBT Transistors TO247GE 650V TRNCH 40A
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ROHM Availability : 23
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USD 5.594

Multiples of: 1

                
IXGT60N60C3D1


IGBT Transistors 60 Amps 600V
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IXYS Availability : 23
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USD 6.0357

Multiples of: 1

         TubeSi    Ixgt60n60
APT45GP120B2DQ2G


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
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Microchip Availability : 23
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USD 19.205

Multiples of: 1

Single1.2 kV3.3 V30 V113 A100 nA  T - MAX - 3TubeSiThrough Hole625 W- 55 C+ 150 C 
IGP10N60T


Transistor: IGBT; 600V; 18A; 110W; TO220-3
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Infineon Availability : 22
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USD 0.7394

Multiples of: 1

      110 W         
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