About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
AFGY120T65SPD


IGBT Trench Field Stop 650V 160A 714W Through Hole TO-247-3
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ON Semiconductor Availability : 19
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USD 12.6093

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        TO - 247 - 3      Automotive, Aec - Q101
IKFW75N60ET


IGBT Transistors INDUSTRY 14
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Infineon Availability : 19
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USD 13.1159

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IKA10N60TXKSA1


IGBT Transistors IGBT PRODUCTS
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Infineon Availability : 18
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USD 2.1193

Multiples of: 1

        TO - 220 - 3TubeSi    Trenchstop
NGTB20N135IHRWG


ON Semiconductor IGBT Transistors 1350V20A IGBT FSII TO-24
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ON Semiconductor Availability : 18
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USD 2.668

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Single1350 V2.2 V25 V40 A100 nA  TO - 247TubeSiThrough Hole394 W- 40 C+ 175 CNgtb20n135ihr
NGTB50N60FWG


IGBT Transistors 600V/50A IGBT NPT TO-247
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ON Semiconductor Availability : 18
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USD 3.5075

Multiples of: 1

Single600 V1.45 V30 V100 A200 nA223 W TO - 247Tube Through Hole - 55 C+ 150 CNgtb50n60fwg
NTE3300


Transistor: IGBT; 400V; 10A; 30W; TO220FP
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NTE Availability : 18
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USD 7.7391

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      30 W         
AFGY160T65SPD-B4


IGBT Transistors IGBT - 650V 160A Field Stop Trench IGBT with VCESAT and VTH Binning
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ON Semiconductor Availability : 18
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USD 14.6991

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         Tube      
IXBT16N170AHV


IGBT Transistors Disc IGBT BiMosfet-High Volt TO-268AA
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IXYS Availability : 18
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USD 15.7734

Multiples of: 1

Single1.7 kV6 V20 V16 A100 nA  TO - 268HV - 2 SiSmd/Smt150 W- 55 C+ 150 C 
STGWT60H65DFB


STMicroelectronics IGBT Transistors 650V 60A HSpd trench gate field-stop IGBT
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STMicroelectronics Availability : 17
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USD 3.3957

Multiples of: 1

Single650 V1.6 V+/- 20 V80 A250 nA375 W TO - 3PTubeSiThrough Hole375 W- 55 C+ 175 CStgwt60h65dfb
FGD3245G2-F085


Trans IGBT Chip N-CH 450V 23A 150000mW Automotive 3-Pin(2+Tab) DPAK T/R
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USD 1.5717

Multiples of: 1

Single        Tape And Reel      
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