About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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Image	Stock Code(▲▼)	Description	Manufacturer	Global Stock ⓘ (▲▼)	Price(USD) (Ex. GST)(▲▼)	Enter Qty	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Maximum Gate Emitter Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Power Dissipation	Qualification	Package / Case	Packaging	Technology	Mounting Style	Pd - Power Dissipation	Minimum Operating Temperature	Maximum Operating Temperature	Series

NGTB30N60FLWG

IGBT Transistors 600V/30A IGBT LPT TO-247

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ON Semiconductor

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May 2025

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USD 2.6233

Multiples of: 1

Single

600 V

1.65 V

30 V

60 A

100 nA

TO - 247

Tube

Through Hole

250 W

- 55 C

+ 150 C

Ngtb30n60flwg

STGW30NC60VD

STMicroelectronics IGBT Transistors PowerMESH

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STMicroelectronics

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USD 2.6263

Multiples of: 1

Single

600 V

2.5 V

+/- 20 V

+/- 100 nA

TO - 247 - 3

Tube

Through Hole

250 W

- 55 C

+ 150 C

600 - 650V Igbts

STGB30H60DF

Trans IGBT Chip N-CH 600V 60A 3-Pin(2+Tab) D2PAK T/R

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STMicroelectronics

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USD 2.6287

Multiples of: 1

IGW25N120H3XK

IGBT Transistors IGBT PRODUCTS

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Infineon

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USD 2.636

Multiples of: 1

Single

1200 V

2.05 V

+/- 20 V

50 A

600 nA

TO - 247 - 3

Tube

Through Hole

326 W

- 40 C

+ 175 C

Highspeed 3

IRG7PH28UD1PBF

Trans IGBT Chip N-CH 1.2KV 30A 3-Pin(3+Tab) TO-247AC Tube

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Infineon

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USD 2.6379

Multiples of: 165

1200 V

2.3 V

30 V

30 A

100 uA

TO - 247AC - 3

Tube

Through Hole

115 W

NGTB25N120FLWG

IGBT Transistors 1200V/25A IGBT SOLAR/UPS

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor

Availability : 0
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May 2025

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USD 2.6394

Multiples of: 1

Single

1200 V

2 V

20 V

50 A

100 nA

192 W

TO - 247

Tube

Through Hole

192 W

- 55 C

+ 150 C

Ngtb25n120fl

STGWT20H65FB

STMicroelectronics IGBT Transistors

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STMicroelectronics

Availability : 0
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May 2025

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USD 2.6408

Multiples of: 1

Single

650 V

1.55 V

20 V

40 A

250 nA

TO - 3P

Tube

Through Hole

168 W

- 55 C

+ 175 C

600 - 650V Igbts

IRG7PH35U-EP

IGBT Transistors IGBT DISCRETES

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Infineon

Availability : 0
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May 2025

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USD 2.6408

Multiples of: 1

1.2 kV

2.2 V

55 A

TO - 247 - 3

Tube

Through Hole

210 W

IRG4PC40FDPBF

IGBT Transistors 600V Fast 1-8kHz

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Infineon

Availability : 0
Ship by 6 to 16 Weeks

May 2025

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USD 2.6486

Multiples of: 1

Single

600 V

1.7 V

+/- 20 V

49 A

160 W

TO - 247

Tube

Through Hole

- 55 C

IHW30N60T

Infineon Technologies IGBT Transistors LOW LOSS DuoPack 600V 30A

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Infineon

Availability : 0
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USD 2.6532

Multiples of: 1

Single

600 V

1.5 V

+/- 20 V

30 A

TO - 247 - 3

Tube

Through Hole

187 W

- 40 C

+ 150 C

Ihw30n60

STGFW40V60F

IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 40 A very high speed

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics

Availability : 0
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USD 2.6539

Multiples of: 1

Single

600 V

1.8 V

+/- 20 V

80 A

250 nA

TO - 3PF

Tube

Through Hole

62.5 W

- 55 C

+ 175 C

600 - 650V Igbts

IXYH20N65C3

IGBT Transistors Disc IGBT XPT-GenX3 TO-247AD

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS

Availability : 0
Ship by 6 to 16 Weeks

May 2025

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USD 2.6592

Multiples of: 1

Single

650 V

2.27 V

20 V

50 A

100 nA

TO - 247AD - 3

Through Hole

230 W

- 55 C

+ 175 C

STGWA30H65FB

IGBT Transistors Trench gate field-stop IGBT HB series 650 V 30 A high speed

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STMicroelectronics

Availability : 0
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May 2025

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USD 2.6616

Multiples of: 1

Single

650 V

1.55 V

20 V

60 A

250 nA

TO - 247 - 3

Through Hole

260 W

- 55 C

+ 175 C

Stgwa30h65fb

STGY40NC60VD

STMicroelectronics IGBT Transistors N Ch 600V 50A Max247

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STMicroelectronics

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USD 2.6629

Multiples of: 600

Single

600 V

+/- 20 V

MAX247 - 3

Tube

Through Hole

- 55 C

+ 150 C

600 - 650V Igbts

RJH60T04DPQ-A1#T0

IGBT Transistors IGBT 650V TO247A

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Renesas

Availability : 0
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May 2025

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USD 2.6681

Multiples of: 700

Single

600 V

1.5 V

+/- 30 V

60 A

+/- 1 uA

TO - 247A - 3

Tube

Through Hole

208.3 W

- 55 C

+ 150 C

RGTV00TS65GC11

IGBT Transistors 650V 50A TO-247N Field Stp Trnch IGBT

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM

Availability : 0
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USD 2.6719

Multiples of: 1

Single

650 V

1.5 V

30 V

95 A

200 nA

TO - 247N - 3

Tube

Through Hole

276 W

- 40 C

+ 175 C

AFGHL75T65SQD

IGBT Transistors 650V75A FS4 IGBT

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ON Semiconductor

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USD 2.6759

Multiples of: 1

Tube

FGA15N120ANTDTU F109

TO-3P-3 IGBTs ROHS

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ON Semiconductor

Availability : 0
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USD 2.6804

Multiples of: 1

SG50N60B

Transistor: IGBT; 600V; 50A; TO247AD

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Sirectifier

Availability : 0
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USD 2.6969

Multiples of: 1

IXYP20N65B3D1

IGBT Transistors Disc IGBT XPT-GenX3 TO-220AB/FP

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IXYS

Availability : 0
Ship by 6 to 16 Weeks

May 2025