Field Stop Trench IGBT 650 V, 75 A AFGHL75T65SQD Using the novel field stop 4th generation high speed IGBT technology. AFGHL75T65SQD which is AEC Q101 qualified offers the optimum performance for both hard and soft switching topology in www.onsemi.com automotive application. Features 75 A, 650 V AECQ101 Qualified V = 1.6 V Maximum Junction Temperature: T = 175C CESat J Positive Temperature Coefficient for Easy Parallel Operating High Current Capability C Low Saturation Voltage: V = 1.6 V (Typ.) I = 75 A CE(Sat) C 100% of the Parts are Tested for I (Note 2) LM Fast Switching G Tight Parameter Distribution RoHS Compliant E Typical Applications Automotive HEVEV Onboard Chargers Automotive HEVEV DCDC Converters Totem Pole Bridgeless PFC MAXIMUM RATINGS G C E Rating Symbol Value Unit TO2473L CollectortoEmitter Voltage V 650 V CES CASE 340CX GatetoEmitter Voltage V 20 V GES Transient GatetoEmitter Voltage 30 MARKING DIAGRAM Collector Current (Note 1) T = 25C I 80 A C C T = 100C 75 C Pulsed Collector Current (Note 2) I 300 A LM Pulsed Collector Current (Note 3) I 300 A CM &Y&Z&3&K Diode Forward Current T 25C I 80 A C = F AFGHL 50 T 100C C = 75T65SQD Pulsed Diode Maximum Forward Current I 300 A FM(2) Maximum Power Dissipation T = 25C P 375 W C D T = 100C 188 C Operating Junction T , 55 to C J / Storage Temperature Range T +175 STG &Y = ON Semiconductor Logo &Z = Assembly Plant Code Maximum Lead Temp. for Soldering T 300 C L &3 = 3Digit Data Code Purposes, 1/8 from case for 5 seconds &K = 2Digit Lot Traceability Code Stresses exceeding those listed in the Maximum Ratings table may damage the AFGHL75T65SQD = Specific Device Code device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Value limit by bond wire ORDERING INFORMATION 2. V = 400 V, V = 15 V, I = 300 A, R = 15 , Inductive Load CC GE C G 3. Repetitive Rating: pulse width limited by max. Junction temperature Device Package Shipping AFGHL75T65SQD TO 247 3L 30 Units / Rail Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: October, 2019 Rev. 0 AFGHL75T65SQD/DAFGHL75T65SQD THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.4 C/W JC Thermal resistance junctiontocase, for Diode R 0.65 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Test Conditions Symbol Min Typ Max Unit OFF CHARACTERISTICS Collectoremitter breakdown voltage, V = 0 V, BV 650 V GE CES gateemitter shortcircuited I = 1 mA C Temperature Coefficient of Breakdown V = 0 V, 0.6 V/C GE BV CES Voltage I = 1 mA C T J Collectoremitter cutoff current, V = 0 V, I 250 A GE CES gateemitter shortcircuited V = 650 V CE Gate leakage current, collectoremitter V = 20 V, I 400 nA GE GES shortcircuited V = 0 V CE ON CHARACTERISTICS Gateemitter threshold voltage V = V , I = 75 mA V 3.4 4.9 6.4 V GE CE C GE(th) Collectoremitter saturation voltage V = 15 V, I = 75 A V 1.6 2.1 V GE C CE(sat) V = 15 V, I = 75 A, T = 175C 1.95 GE C J DYNAMIC CHARACTERISTICS V = 30 V, pF Input capacitance C 4617 CE ies V = 0 V, GE Output capacitance C 152 f = 1 MHz oes Reverse transfer capacitance C 13 res V = 400 V, nC Gate charge total Q 136 CE g I = 75 A, C Gatetoemitter charge Q 25 V = 15 V ge GE Gatetocollector charge Q 32 gc SWITCHING CHARACTERISTICS, INDUCTIVE LOAD Turnon delay time T = 25C, t 23 ns C d(on) V = 400 V, CC Rise time t 17 r I = 37.5 A, C R = 4.7 , G Turnoff delay time t 112 d(off) V = 15 V, GE Inductive Load Fall time t 8 f Turnon switching loss E 0.61 mJ on Turnoff switching loss E 0.21 off Total switching loss E 0.82 ts T = 25C, ns Turnon delay time t 25 C d(on) V = 400 V, CC Rise time t 46 I = 75 A, r C R = 4.7 , G Turnoff delay time t 106 d(off) V = 15 V, GE Inductive Load Fall time t 67 f Turnon switching loss E 1.86 mJ on Turnoff switching loss E 1.13 off Total switching loss E 2.99 ts www.onsemi.com 2